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Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity.


ABSTRACT: A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ∼20-nm-thin films consisting of an amorphous HfOx host matrix interspersed with ∼2-nm-wide, ∼5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of ≥104 cycles for a memory window ≥10 at switching voltages of ±2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing-dependent plasticity. The presented concept unlocks additional design variables for RS devices.

SUBMITTER: Hellenbrand M 

PROVIDER: S-EPMC10284547 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature

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Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity.

Hellenbrand Markus M   Bakhit Babak B   Dou Hongyi H   Xiao Ming M   Hill Megan O MO   Sun Zhuotong Z   Mehonic Adnan A   Chen Aiping A   Jia Quanxi Q   Wang Haiyan H   MacManus-Driscoll Judith L JL  

Science advances 20230621 25


A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ∼20-nm-thin films consisting of an amorphous HfO<i><sub>x</sub></i> host matrix interspersed with ∼2-nm-wide, ∼5-to-10-nm-pitch Ba-rich a  ...[more]

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