Unknown

Dataset Information

0

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking.


ABSTRACT: Current induced spin-orbit torque (SOT) holds great promise for next generation magnetic-memory technology. Field-free SOT switching of perpendicular magnetization requires the breaking of in-plane symmetry, which can be artificially introduced by external magnetic field, exchange coupling or device asymmetry. Recently it has been shown that the exploitation of inherent crystal symmetry offers a simple and potentially efficient route towards field-free switching. However, applying this approach to the benchmark SOT materials such as ferromagnets and heavy metals is challenging. Here, we present a strategy to break the in-plane symmetry of Pt/Co heterostructures by designing the orientation of Burgers vectors of dislocations. We show that the lattice of Pt/Co is tilted by about 1.2° when the Burgers vector has an out-of-plane component. Consequently, a tilted magnetic easy axis is induced and can be tuned from nearly in-plane to out-of-plane, enabling the field-free SOT switching of perpendicular magnetization components at room temperature with a relatively low current density (~1011 A/m2) and excellent stability (> 104 cycles). This strategy is expected to be applicable to engineer a wide range of symmetry-related functionalities for future electronic and magnetic devices.

SUBMITTER: Liang Y 

PROVIDER: S-EPMC10482861 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature

altmetric image

Publications

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking.

Liang Yuhan Y   Yi Di D   Nan Tianxiang T   Liu Shengsheng S   Zhao Le L   Zhang Yujun Y   Chen Hetian H   Xu Teng T   Dai Minyi M   Hu Jia-Mian JM   Xu Ben B   Shi Ji J   Jiang Wanjun W   Yu Rong R   Lin Yuan-Hua YH  

Nature communications 20230906 1


Current induced spin-orbit torque (SOT) holds great promise for next generation magnetic-memory technology. Field-free SOT switching of perpendicular magnetization requires the breaking of in-plane symmetry, which can be artificially introduced by external magnetic field, exchange coupling or device asymmetry. Recently it has been shown that the exploitation of inherent crystal symmetry offers a simple and potentially efficient route towards field-free switching. However, applying this approach  ...[more]

Similar Datasets

| S-EPMC8087697 | biostudies-literature
| S-EPMC10619928 | biostudies-literature
| S-EPMC8316453 | biostudies-literature
| S-EPMC10460875 | biostudies-literature
| S-EPMC10907725 | biostudies-literature
| S-EPMC10482325 | biostudies-literature
| S-EPMC4822117 | biostudies-other
| S-EPMC8891290 | biostudies-literature
| S-EPMC5025772 | biostudies-literature
| S-EPMC9343665 | biostudies-literature