Project description:Colloidal CsPbBr3 nanocrystals (NCs) have emerged as promising candidates for various opto-electronic applications, such as light-emitting diodes, photodetectors, and solar cells. Here, we report on the self-assembly of cubic NCs from an organic suspension into ordered cuboidal supraparticles (SPs) and their structural and optical properties. Upon increasing the NC concentration or by addition of a nonsolvent, the formation of the SPs occurs homogeneously in the suspension, as monitored by in situ X-ray scattering measurements. The three-dimensional structure of the SPs was resolved through high-angle annular dark-field scanning transmission electron microscopy and electron tomography. The NCs are atomically aligned but not connected. We characterize NC vacancies on superlattice positions both in the bulk and on the surface of the SPs. The occurrence of localized atomic-type NC vacancies-instead of delocalized ones-indicates that NC-NC attractions are important in the assembly, as we verify with Monte Carlo simulations. Even when assembled in SPs, the NCs show bright emission, with a red shift of about 30 meV compared to NCs in suspension.
Project description:Using surfactants in the galvanic replacement reaction (GRR) offers a versatile approach to modulating hollow metal nanocrystal (NC) morphology and composition. Among the various surfactants available, quaternary ammonium cationic surfactants are commonly utilised. However, understanding how they precisely influence morphological features, such as the size and void distribution, is still limited. In this study, we aim to uncover how adding different surfactants-CTAB, CTAC, CTApTS, and PVP-can fine-tune the morphological characteristics of AuAg hollow NCs synthesised via GRR at room temperature. Our findings reveal that the halide counterion in the surfactant significantly controls void formation within the hollow structure. When halogenated surfactants, such as CTAB or CTAC, are employed, multichambered opened nanoboxes are formed. In contrast, with non-halogenated CTApTS, single-walled closed nanoboxes with irregularly thick walls form. Furthermore, when PVP, a polymer surfactant, is utilised, changes in concentration lead to the production of well-defined single-walled closed nanoboxes. These observations highlight the role of surfactants in tailoring the morphology of hollow NCs synthesised through GRR.
Project description:Propylene epoxidation with O2 to propylene oxide is a very valuable reaction but remains as a long-standing challenge due to unavailable efficient catalysts with high selectivity. Herein, we successfully explore 27 nm-sized cubic Cu2O nanocrystals enclosed with {100} faces and {110} edges as a highly selective catalyst for propylene epoxidation with O2, which acquires propylene oxide selectivity of more than 80% at 90-110 °C. Propylene epoxidation with weakly-adsorbed O2 species at the {110} edge sites exhibits a low barrier and is the dominant reaction occurring at low reaction temperatures, leading to the high propylene oxide selectivity. Such a weakly-adsorbed O2 species is not stable at high reaction temperatures, and the surface lattice oxygen species becomes the active oxygen species to participate in propylene epoxidation to propylene oxide and propylene partial oxidation to acrolein at the {110} edge sites and propylene combustion to CO2 at the {100} face sites, which all exhibit high barriers and result in decreased propylene oxide selectivity.
Project description:A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gallium and oxygen) on the chemical composition of implanted layers is reported. The separation of gallium profiles in the elemental and oxidized states is shown, even in the absence of post-implantation annealing. As a result of annealing, blue photoluminescence, associated with the recombination of donor-acceptor pairs (DAP) in Ga2O3 nanocrystals, appears in the spectrum. The structural characterization by transmission electron microscopy confirms the formation of β-Ga2O3 nanocrystals. The obtained results open up the possibility of using nanocrystalline gallium oxide inclusions in traditional CMOS technology.
Project description:Twinning is commonly activated in plastic deformation of low stacking-fault face-centered cubic (Fcc) metals but rarely found in body-centered cubic (Bcc) metals under room temperature and slow strain rates. Here, by conducting in situ transmission electron microscopy (TEM) at atomic scale, we discover that, in stark contrast to those in most Fcc metals, a majority of deformation twins in Bcc metals are unstable and undergo spontaneously detwinning upon unloading. Such unexpected instability of Bcc twins is found to be closely related to the prevalence of the inclined twin boundaries-a peculiar structure where twin boundaries are not parallel to the twinning plane, and the degree of instability is in direct proportion to the fraction of the inclined twin boundary. This work provides significant insights into the structure and stability of deformation twins in Bcc metals.
Project description:One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of external quantum yield of photoluminescence of solid-state dispersions of Si nanocrystals in SiO2. By making use of a low-temperature hydrogen passivation treatment we demonstrate a maximum emission quantum efficiency of approximately 35%. This is the highest value ever reported for this type of material. By cross-correlating PL lifetime with EQE values, we obtain a comprehensive understanding of the efficiency limiting processes induced by Pb-defects. We establish that the observed record efficiency corresponds to an interface density of Pb-centers of 1.3 × 10(12) cm(12), which is 2 orders of magnitude higher than for the best Si/SiO2 interface. This result implies that Si nanocrystals with up to 100% emission efficiency are feasible.
Project description:Increasing temperature is known to quench the excitonic emission of bulk silicon, which is due to thermally induced dissociation of excitons. Here, we demonstrate that the effect of temperature on the excitonic emission is reversed for quantum-confined silicon nanocrystals. Using laser-induced heating of silicon nanocrystals embedded in SiO2, we achieved a more than threefold (>300%) increase in the radiative (photon) emission rate. We theoretically modeled the observed enhancement in terms of the thermally stimulated effect, taking into account the massive phonon production under intense illumination. These results elucidate one more important advantage of silicon nanostructures, illustrating that their optical properties can be influenced by temperature. They also provide an important insight into the mechanisms of energy conversion and dissipation in ensembles of silicon nanocrystals in solid matrices. In practice, the radiative rate enhancement under strong continuous wave optical pumping is relevant for the possible application of silicon nanocrystals for spectral conversion layers in concentrator photovoltaics.
Project description:Si nanocrystals (NCs) are often prepared by thermal annealing of multiple stacks of alternating sub-stoichiometric SiOx and SiO2 nanolayers. It is frequently claimed that in these structures, the NC diameter can be predefined by the thickness of the SiOx layer, while the NC concentration is independently controlled by the stoichiometry parameter x. However, several detailed structural investigations report that the NC size confinement to within the thickness of the SiOx layer is not strictly obeyed. In this study we address these contradicting findings: based on cross-correlation between structural and optical characterization of NCs grown in a series of purposefully prepared samples of different stoichiometry and layer thickness, we develop a comprehensive understanding of NC formation by Si precipitation in multinanolayer structures. We argue that the narrow NC size distribution generally observed in these materials appears due to reduction of the Si diffusion range, imposed by the SiO2 spacer layer. Therefore, both the SiOx layer thickness and composition as well as the actual thickness of the SiO2 spacer play an essential role in the NC formation.
Project description:Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)Si(111) substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples.
Project description:The morphology, structure, composition, and conduction electron properties of quasi-spherical tin nanocrystals (NCs) of 2.5 nm average diameter, with unstrained, bulk-like α-Sn diamond cubic structure, observed in dark cubic boron nitride (cBN) crystallites, were determined by correlated analytical high-resolution scanning transmission electron microscopy and multifrequency electron spin resonance (ESR) investigations. The narrow Lorentzian ESR line with g = 2.0028 is attributed to the conduction ESR of the α-Sn NCs, consistent with the temperature- and frequency-independent small g-shift and intensity reduction under high temperature (950 °C) vacuum annealing when the α-Sn NCs are thermally dissolved in the host cBN crystallites. The ESR linewidth and line intensity vs temperature dependences recorded in the 20 to 295 K range are quantitatively described considering the presence of discrete, quantum confinement-induced conduction electron energy levels with ΔQC/k B = 125 K separation, close to the theoretical value for conductive α-Sn NCs of 2.5 nm in diameter. The observed properties are tentatively explained with the predicted nanosize induced band-gap opening and change of band ordering from bulk α-Sn to small unstrained α-Sn NCs, resulting in a topological phase transition that also explains the predominantly s-like character of the conduction band electron orbitals.