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Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions.

ABSTRACT: In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear stopping power of the incident ions at a low dpa level with a coefficient of 2.15 × 10-3 eV-1. Prediction through this correlation is consistent with previous work. Besides, the measured value is about 1/2 of the simulation results with the popular SRIM code. Overall, our work provides a feasible way to get the generation rate of a certain irradiation-induced defect by electric measurements, and the correlation obtained is practically useful in various applications.

SUBMITTER: Guo L

PROVIDER: S-EPMC10633851 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature

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Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions.

Guo Linxin L Peng Shengyuan S Liu Yong Y Tian Shang S Zhou Wei W Wang Hao H Xue Jianming J

ACS omega 20231030 44

In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear stopping power of the incident ions at a low dpa level with a coefficient of 2.15 × 10<sup>-3</sup> eV<sup>-1</sup>. Prediction through this correlation is consistent with previous work. Besides, the measured value is abo ...[more]

PMID: 37970004

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