Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO₂-Based Artificial Neurons.

ABSTRACT: Filamentary-type resistive switching devices, such as conductive bridge random-access memory and valence change memory, have diverse applications in memory and neuromorphic computing. However, the randomness in filament formation poses challenges to device reliability and uniformity. To overcome this issue, various defect engineering methods have been explored, including doping, metal nanoparticle embedding, and extended defect utilization. In this study, we present a simple and effective approach using self-assembled uniform Au nanoelectrodes to controll filament formation in HfO₂ resistive switching devices. By concentrating the electric field near the Au nanoelectrodes within the BaTiO₃ matrix, we significantly enhanced the device stability and reduced the threshol

SUBMITTER: Dou H 

PROVIDER: S-EPMC10636789 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature