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Biomimetic wafer-scale alignment of tellurium nanowires for high-mobility flexible and stretchable electronics.


ABSTRACT: Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for wearable and implantable applications. Such electronics are usually constrained in performance owing to a lack of high-mobility and stretchable semiconducting channels. Tellurium, a rising semiconductor with superior charge carrier mobilities, has been limited by its intrinsic brittleness and anisotropy. Here, we achieve highly oriented arrays of tellurium nanowires (TeNWs) on various substrates with wafer-scale scalability by a facile lock-and-shear strategy. Such an assembly approach mimics the alignment process of the trailing tentacles of a swimming jellyfish. We further apply these TeNW arrays in high-mobility TFTs and logic gates with improved flexibility and stretchability. More specifically, mobilities over 100 square centimeters per volt per second and on/off ratios of ~104 are achieved in TeNW-TFTs. The TeNW-TFTs on polyethylene terephthalate can sustain an omnidirectional bending strain of 1.3% for more than 1000 cycles. Furthermore, TeNW-TFTs on an elastomeric substrate can withstand a unidirectional strain of 40% with no performance degradation.

SUBMITTER: Zhao Y 

PROVIDER: S-EPMC10997201 | biostudies-literature | 2024 Apr

REPOSITORIES: biostudies-literature

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Biomimetic wafer-scale alignment of tellurium nanowires for high-mobility flexible and stretchable electronics.

Zhao Yingtao Y   Zhao Sanchuan S   Pang Xixi X   Zhang Anni A   Li Chenning C   Lin Yuxuan Y   Du Xiaomeng X   Cui Lei L   Yang Zhenhua Z   Hao Tailang T   Wang Chaopeng C   Yin Jun J   Xie Wei W   Zhu Jian J  

Science advances 20240405 14


Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for wearable and implantable applications. Such electronics are usually constrained in performance owing to a lack of high-mobility and stretchable semiconducting channels. Tellurium, a rising semiconductor with superior charge carrier mobilities, has been limited by its intrinsic brittleness and anisotropy. Here, we achieve highly oriented arrays of tellurium nanowires (TeNWs) on various substrates with w  ...[more]

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