Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

2D/2D Bi₂Se₃/SnSe₂ heterostructure with rapid NO₂ gas detection.

ABSTRACT: Heterostructure engineering is crucial for enhancing gas sensing performance. However, achieving rapid response for room-temperature NO₂ sensing through rational heterostructure design remains a challenge. In this study, a Bi₂Se₃/SnSe₂ 2D/2D heterostructure was synthesized by hydrothermal method for the rapid detection of NO₂ at room temperature. By combining Bi₂Se₃ nanosheets with SnSe₂ nanosheets, the Bi₂Se₃/SnSe₂ sensor demonstrated and the lowest detection limit for NO₂ a short response time (15 s) to 10 ppm NO₂ at room temperature, reaches 25 ppb. Furthermore the sensor demonstrates significantly larger response to NO₂ than to other interfering gases, including 10 ppm NO₂, H₂S, NH₃, CH₄, CO, and SO₂,demonstrating its outstanding selectivity. And we discuss the mechanism of related performance enhancement.

SUBMITTER: Yi S

PROVIDER: S-EPMC11309994 | biostudies-literature | 2024

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

2D/2D Bi2Se3/SnSe2 heterostructure with rapid NO2 gas detection.

Yi Shuangshuang S Chen Cunguang C Yu Meiling M Hao Juanjuan J Wang You Y

Frontiers in chemistry 20240726

Heterostructure engineering is crucial for enhancing gas sensing performance. However, achieving rapid response for room-temperature NO2 sensing through rational heterostructure design remains a challenge. In this study, a Bi2Se3/SnSe2 2D/2D heterostructure was synthesized by hydrothermal method for the rapid detection of NO2 at room temperature. By combining Bi2Se3 nanosheets with SnSe2 nanosheets, the Bi<su ...[more]

PMID: 39130800

Similar Datasets

Raman Anisotropy and Polarization-Sensitive Photodetection in 2D Bi2O2Se-WSe2 Heterostructure.

Project description:Two-dimensional (2D) bismuth oxyselenide (Bi2O2Se) has attracted increasing attention due to its high mobility, tunable band gap, and air stability. The surface reconstruction of cleaved Bi2O2Se due to the electrostatic interlayer interactions can lead to the in-plane anisotropic structure and physics. In this work, we first discovered the strong anisotropy in phonon modes through the angle-resolved polarized Raman (ARPR) spectra. Benefiting from the anisotropic feature, a high-performance polarization-sensitive photodetector has been achieved by constructing a heterostructure composed of the multilayer Bi2O2Se as polarized-light sensitizers and 2D WSe2 as a photocarrier transport channel. The detectors exhibit broadband response spectra from 405 to 1064 nm along with high responsivity, fast speed, and high sensitivity owing to the photogating effect in this device architecture. More importantly, the photocurrent shows strong light polarization dependence with the maximum dichroism ratio of 4.9, and a reversal is observed for the angle-dependent photocurrent excited by polarized 405 and 635 nm light. This work provides new insight in terms of optical and photocurrent anisotropy of exfoliated Bi2O2Se and expands its applications in angle-resolved electronics and optoelectronics.

| S-EPMC8697402 | biostudies-literature

Topological insulator Bi2Se3 for highly sensitive, selective and anti-humidity gas sensors.

Project description:Chemiresistive gas sensors generally surfer from low selectivity, inferior anti-humidity, low response signal or signal-to-noise ratio, severely limiting the precise detection of chemical agents. Herein, we exploit high-performance gas sensors based on topological insulator Bi2Se3 that is distinguished from conventional materials by robust metallic surface states protected by time-reversal symmetry. In the presence of Se vacancies, Bi2Se3 nanosheets exhibit excellent gas sensing capability toward NO2, with a high response of 93% for 50 ppm and an ultralow theoretical limit of detection concentration about 0.06 ppb at room temperature. Remarkably, Bi2Se3 demonstrates ultrahigh anti-humidity interference characteristics, as the response with standard deviation of only 3.63% can be achieved in relative humidity range of 0-80%. These findings are supported by first-principles calculations, with analyses on adsorption energy and charge transfer directly revealing the anti-humidity and selectivity. This work may pave the way for implementation of exotic quantum states for intelligent applications.

| S-EPMC10074142 | biostudies-literature

Polarization-Switchable Electrochemistry of 2D Layered Bi2O2Se Bifunctional Microreactors by Ferroelectric Modulation.

Project description:Ferroelectric catalysts are known for altering surface catalytic activities by changing the direction of their electric polarizations. This study demonstrates polarization-switchable electrochemistry using layered bismuth oxyselenide (L-Bi2O2Se) bifunctional microreactors through ferroelectric modulation. A selective-area ionic liquid gating is developed with precise control over the spatial distribution of the dipole orientation of L-Bi2O2Se. On-chip microreactors with upward polarization favor the oxygen evolution reaction, whereas those with downward polarization prefer the hydrogen evolution reaction. The microscopic origin behind polarization-switchable electrochemistry primarily stems from enhanced surface adsorption and reduced energy barriers for reactions, as examined by nanoscale scanning electrochemical cell microscopy. Integrating a pair of L-Bi2O2Se microreactors consisting of upward or downward polarizations demonstrates overall water splitting in a full-cell configuration based on a bifunctional catalyst. The ability to modulate surface polarizations on a single catalyst via ferroelectric polarization switching offers a pathway for designing catalysts for water splitting.

| S-EPMC11378338 | biostudies-literature

Excellent Thermoelectric Performance of 2D CuMN2 (M = Sb, Bi; N = S, Se) at Room Temperature.

Project description:2D copper-based semiconductors generally possess low lattice thermal conductivity due to their strong anharmonic scattering and quantum confinement effect, making them promising candidate materials in the field of high-performance thermoelectric devices. In this work, we proposed four 2D copper-based materials, namely CuSbS2, CuSbSe2, CuBiS2, and CuBiSe2. Based on the framework of density functional theory and Boltzmann transport equation, we revealed that the monolayers possess high stability and narrow band gaps of 0.57~1.10 eV. Moreover, the high carrier mobilities (102~103 cm2·V-1·s-1) of these monolayers lead to high conductivities (106~107 Ω-1·m-1) and high-power factors (18.04~47.34 mW/mK2). Besides, as the strong phonon-phonon anharmonic scattering, the monolayers also show ultra-low lattice thermal conductivities of 0.23~3.30 W/mK at 300 K. As results show, all the monolayers for both p-type and n-type simultaneously show high thermoelectric figure of merit (ZT) of about 0.91~1.53 at room temperature.

| S-EPMC9572028 | biostudies-literature

Bi2 Te3 /Bi2 Se3 /Bi2 S3 Cascade Heterostructure for Fast-Response and High-Photoresponsivity Photodetector and High-Efficiency Water Splitting with a Small Bias Voltage.

Project description:Large-scale multi-heterostructure and optimal band alignment are significantly challenging but vital for photoelectrochemical (PEC)-type photodetector and water splitting. Herein, the centimeter-scale bismuth chalcogenides-based cascade heterostructure is successfully synthesized by a sequential vapor phase deposition method. The multi-staggered band alignment of Bi2 Te3 /Bi2 Se3 /Bi2 S3 is optimized and verified by X-ray photoelectron spectroscopy. The PEC photodetectors based on these cascade heterostructures demonstrate the highest photoresponsivity (103 mA W-1 at -0.1 V and 3.5 mAW-1 at 0 V under 475 nm light excitation) among the previous reports based on two-dimensional materials and related heterostructures. Furthermore, the photodetectors display a fast response (≈8 ms), a high detectivity (8.96 × 109 Jones), a high external quantum efficiency (26.17%), and a high incident photon-to-current efficiency (27.04%) at 475 nm. Due to the rapid charge transport and efficient light absorption, the Bi2 Te3 /Bi2 Se3 /Bi2 S3 cascade heterostructure demonstrates a highly efficient hydrogen production rate (≈0.416 mmol cm-2 h-1 and ≈14.320 µmol cm-2 h-1 with or without sacrificial agent, respectively), which is far superior to those of pure bismuth chalcogenides and its type-II heterostructures. The large-scale cascade heterostructure offers an innovative method to improve the performance of optoelectronic devices in the future.

| S-EPMC9951346 | biostudies-literature

Solution-Mediated Inversion of SnSe to Sb2Se3 Thin-Films.

Project description:New facile and controllable approaches to fabricating metal chalcogenide thin films with adjustable properties can significantly expand the scope of these materials in numerous optoelectronic and photovoltaic devices. Most traditional and especially wet-chemical synthetic pathways suffer from a sluggish ability to regulate the composition and have difficulty achieving the high-quality structural properties of the sought-after metal chalcogenides, especially at large 2D length scales. In this effort, and for the first time, we illustrated the fast and complete inversion of continuous SnSe thin-films to Sb2Se3 using a scalable top-down ion-exchange approach. Processing in dense solution systems yielded the formation of Sb2Se3 films with favorable structural characteristics, while oxide phases, which are typically present in most Sb2Se3 films regardless of the synthetic protocols used, were eliminated. Density functional theory (DFT) calculations performed on intermediate phases show strong relaxations of the atomic lattice due to the presence of substitutional and vacancy defects, which likely enhances the mobility of cationic species during cation exchange. Our concept can be applied to customize the properties of other metal chalcogenides or manufacture layered structures.

| S-EPMC9458253 | biostudies-literature

High output mode-locked laser empowered by defect regulation in 2D Bi2O2Se saturable absorber.

Project description:Atomically thin Bi2O2Se has emerged as a novel two-dimensional (2D) material with an ultrabroadband nonlinear optical response, high carrier mobility and excellent air stability, showing great potential for the realization of optical modulators. Here, we demonstrate a femtosecond solid-state laser at 1.0 µm with Bi2O2Se nanoplates as a saturable absorber (SA). Upon further defect regulation in 2D Bi2O2Se, the average power of the mode-locked laser is improved from 421 mW to 665 mW, while the pulse width is decreased from 587 fs to 266 fs. Moderate Ar+ plasma treatments are employed to precisely regulate the O and Se defect states in Bi2O2Se nanoplates. Nondegenerate pump-probe measurements show that defect engineering effectively accelerates the trapping rate and defect-assisted Auger recombination rate of photocarriers. The saturation intensity is improved from 3.6 ± 0.2 to 12.8 ± 0.6 MW cm-2 after the optimized defect regulation. The enhanced saturable absorption and ultrafast carrier lifetime endow the high-performance mode-locked laser with both large output power and short pulse duration.

| S-EPMC9256711 | biostudies-literature

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure.

Project description:Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus-tin diselenide (BP-SnSe2) heterostructure. This combination of 2D semiconductor thin sheets enables device operation either as an Esaki diode featuring negative differential resistance (NDR) in the negative gate voltage regime or as a backward diode in the positive gate bias regime. Such tuning possibility is imparted by the fact that only the carrier concentration in the BP component can be effectively modulated by electrostatic gating, while the relatively high carrier concentration in the SnSe2 sheet renders it insensitive against gating. Scanning photocurrent microscopy maps indicate the presence of a staggered (type II) band alignment at the heterojunction. The temperature-dependent NDR behavior of the devices is explainable by an additional series resistance contribution from the individual BP and SnSe2 sheets connected in series. Moreover, the backward rectification behavior can be consistently described by the thermionic emission theory, pointing toward the gating-induced formation of a potential barrier at the heterojunction. It furthermore turned out that for effective Esaki diode operation, care has to be taken to avoid the formation of positive charges trapped in the alumina passivation layer.

| S-EPMC6750638 | biostudies-literature

Piezoelectricity of Bi2Se3 Nanosheet.

Project description:Bi2Se3, one of the most extensively studied topological insulators, has received significant attention, and abundant research has been dedicated to exploring its surface electronic properties. However, little attention has been given to its piezoelectric properties. Herein, we investigate the piezoelectric response in a five-layer Bi2Se3 nanosheet using scanning probe microscopy (SPM) techniques. The piezoelectricity of Bi2Se3 is characterized using both conventional piezoresponse force microscopy (PFM) and a sequential excitation scanning probe microscopy (SE-SPM) technique. To confirm the linear piezoelectricity of Bi2Se3 two-dimensional materials, measurements of point-wise linear and quadratic electromechanical responses are carried out. Furthermore, the presence of polarization and relaxation is confirmed through hysteresis loops. As expected, the Bi2Se3 nanosheet exhibits an electromechanical solid response. Due to the inevitable loss of translational symmetry at the crystal edge, the lattice of the odd-layer Bi2Se3 nanosheet is noncentrosymmetric, indicating its potential for linear piezoelectricity. This research holds promise for nanoelectromechanical systems (NEMS) applications and future nanogenerators.

| S-EPMC10535138 | biostudies-literature

Observation of robust zero-energy state and enhanced superconducting gap in a trilayer heterostructure of MnTe/Bi2Te3/Fe(Te, Se).

Project description:The interface between magnetic material and superconductors has long been predicted to host unconventional superconductivity, such as spin-triplet pairing and topological nontrivial pairing state, particularly when spin-orbital coupling (SOC) is incorporated. To identify these unconventional pairing states, fabricating homogenous heterostructures that contain such various properties are preferred but often challenging. Here, we synthesized a trilayer-type van der Waals heterostructure of MnTe/Bi2Te3/Fe(Te, Se), which combined s-wave superconductivity, thickness-dependent magnetism, and strong SOC. Via low-temperature scanning tunneling microscopy, we observed robust zero-energy states with notably nontrivial properties and an enhanced superconducting gap size on single unit cell (UC) MnTe surface. In contrast, no zero-energy state was observed on 2-UC MnTe. First-principle calculations further suggest that the 1-UC MnTe has large interfacial Dzyaloshinskii-Moriya interaction and a frustrated AFM state, which could promote noncolinear spin textures. It thus provides a promising platform for exploring topological nontrivial superconductivity.

| S-EPMC9473575 | biostudies-literature