Browse
Submit Data
Databases
API
Help

Dataset Information

23 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials.

ABSTRACT: Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class.

SUBMITTER: Shakhvorostov D

PROVIDER: S-EPMC2700143 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Project description:Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

| S-EPMC4817142 | biostudies-literature

Terahertz Driven Reversible Topological Phase Transition of Monolayer Transition Metal Dichalcogenides.

Project description:This paper shows how terahertz light can drive ultrafast topological phase transitions in monolayer transition metal dichalcogenides (TMDs). The phase transition is induced by the light interaction with both electron and phonon subsystems in the material. The mechanism of such a phase transition is formulated by thermodynamics theory: the Gibbs free energy landscape can be effectively modulated under light, and the relative stability between different (meta-)stable phases can be switched. This mechanism is applied to TMDs and reversible phase transitions between the topologically trivial 2H and nontrivial 1T' phases are predicted, providing appropriate light frequency, polarization, and intensity are applied. The large energy barrier on the martensitic transformation path can be significantly reduced, yielding a small energy barrier phase transition with fast kinetics. Compared with other phase transition schemes, light illumination has great advantages, such as its non-contact nature and easy tunability. The reversible topological phase transition can be applicable in high-resolution fast data storage and in-memory computing devices.

| S-EPMC8224436 | biostudies-literature

Electronic contribution in heat transfer at metal-semiconductor and metal silicide-semiconductor interfaces.

Project description:This work presents a direct measurement of the Kapitza thermal boundary resistance Rth, between platinum-silicon and platinum silicide-silicon interfaces. Experimental measurements were made using a frequency domain photothermal radiometry set up at room temperature. The studied samples consist of ≈50 nm of platinum and ≈110 nm of platinum silicide on silicon substrates with different doping levels. The substrate thermal diffusivity was found via a hybrid frequency/spatial domain thermoreflectance set up. The films and the interfaces between the two layers were characterized using scanning electron microscopy, transmission electron microscopy and energy-dispersive X-ray spectroscopy. X-ray diffraction was also used to determine the atomic and molecular structures of the samples. The results display an effect of the annealing process on the Kapitza resistance and on the thermal diffusivities of the coatings, related to material and interface changes. The influence of the substrate doping levels on the Kapitza resistance is studied to check the correlation between the Schottky barrier and the interfacial heat conduction. It is suggested that the presence of charge carriers in silicon may create new channels for heat conduction at the interface, with an efficiency depending on the difference between the metal's and substrate's work functions.

| S-EPMC6063978 | biostudies-literature

Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating.

Project description:Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the transition gate voltage can be reduced arbitrarily by alloying, for example, for Mo(x)W(1-x)Te2 monolayers. Our findings identify a new physical mechanism, not existing in bulk materials, to dynamically control structural phase transitions in two-dimensional materials, enabling potential applications in phase-change electronic devices.

| S-EPMC4754345 | biostudies-literature

Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite.

Project description:Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In+/In3+) inorganic halide perovskite with the composition of Cs2In(I)In(III)Cl6 in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space group I4/m with a = 17.2604(12) Å, c = 11.0113(16) Å if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications.

| S-EPMC6876250 | biostudies-literature

Excellent Temperature-Control Based on Reversible Thermochromic Materials for Light-Driven Phase Change Materials System.

Project description:Light-driven phase change materials (PCMs) have received significant attention due to their capacity to convert visible light into thermal energy, storing it as latent heat. However, continuous photo-thermal conversion can cause the PCMs to reach high thermal equilibrium temperatures after phase transition. In our study, a novel light-driven phase change material system with temperature-control properties was constructed using a thermochromic compound. Thermochromic phase change materials (TC-PCMs) were prepared by introducing 2-anilino-6-dibutylamino-3-methylfluoran (ODB-2) and bisphenol A (BPA) into 1-hexadecanol (1-HD) in various proportions. Photo-thermal conversion performance was investigated with solar radiation (low power of 0.09 W/cm2) and a xenon lamp (at a high power of 0.14 W/cm2). The TC-PCMs showed a low equilibrium temperature due to variations in absorbance. Specifically, the temperature of TC-PCM180 (ODB-2, bisphenol A and 1-HD ratio 1:2:180) could stabilize at 54 °C approximately. TC-PCMs exhibited reversibility and repeatability after 20 irradiation and cooling cycles.

| S-EPMC6526475 | biostudies-literature

Macro-Encapsulation of Inorganic Phase-Change Materials (PCM) in Metal Capsules.

Project description:The design of phase-change material (PCM)-based thermal energy storage (TES) systems is challenging since a lot of PCMs have low thermal conductivities and a considerable volume change during phase-change. The low thermal conductivity restricts energy transport due to the increasing thermal resistance of the progressing phase boundary and hence large heat transfer areas or temperature differences are required to achieve sufficient storage power. An additional volume has to be considered in the storage system to compensate for volume change. Macro-encapsulation of the PCM is one method to overcome these drawbacks. When designed as stiff containers with an air cushion, the macro-capsules compensate for volume change of the PCM which facilitates the design of PCM storage systems. The capsule walls provide a large surface for heat transfer and the thermal resistance is reduced due to the limited thickness of the capsules. Although the principles and advantages of macro-encapsulation have been well known for many years, no detailed analysis of the whole encapsulation process has been published yet. Therefore, this research proposes a detailed development strategy for the whole encapsulation process. Various possibilities for corrosion protection, fill and seal strategies and capsule geometries are studied. The proposed workflow is applied for the encapsulation of the salt hydrate magnesiumchloride hexahydrate (MCHH, MgCl 2 · 6 H 2 O) within metal capsules but can also be assigned to other material combinations.

| S-EPMC6164848 | biostudies-other

Nanofluid based on self-nanoencapsulated metal/metal alloys phase change materials with tuneable crystallisation temperature.

Project description:Nanofluids using nanoencapsulated Phase Change Materials (nePCM) allow increments in both the thermal conductivity and heat capacity of the base fluid. Incremented heat capacity is produced by the melting enthalpy of the nanoparticles core. In this work two important advances in this nanofluid type are proposed and experimentally tested. It is firstly shown that metal and metal alloy nanoparticles can be used as self-encapsulated nePCM using the metal oxide layer that forms naturally in most commercial synthesis processes as encapsulation. In line with this, Sn/SnOx nanoparticles morphology, size and thermal properties were studied by testing the suitability and performance of encapsulation at high temperatures and thermal cycling using a commercial thermal oil (Therminol 66) as the base fluid. Secondly, a mechanism to control the supercooling effect of this nePCM type based on non-eutectic alloys was developed.

| S-EPMC5730550 | biostudies-literature

Metallic Phase Transition Metal Dichalcogenide Quantum Dots as Promising Bio-Imaging Materials.

Project description:Transition metal dichalcogenide-based quantum dots are promising materials for applications in diverse fields, such as sensors, electronics, catalysis, and biomedicine, because of their outstanding physicochemical properties. In this study, we propose bio-imaging characteristics through utilizing water-soluble MoS2 quantum dots (MoS2-QDs) with two different sizes (i.e., ~5 and ~10 nm). The structural and optical properties of the fabricated metallic phase MoS2-QDs (m-MoS2-QDs) were characterized by transmission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis absorption spectroscopy, and photoluminescence. The synthesized m-MoS2-QDs showed clear photophysical characteristic peaks derived from the quantum confinement effect and defect sites, such as oxygen functional groups. When the diameter of the synthesized m-MoS2-QD was decreased, the emission peak was blue-shifted from 436 to 486 nm under excitation by a He-Cd laser (325 nm). Density functional theory calculations confirmed that the size decrease of m-MoS2-QDs led to an increase in the bandgap because of quantum confinement effects. In addition, when incorporated into the bio-imaging of HeLa cells, m-MoS2-QDs were quite biocompatible with bright luminescence and exhibited low toxicity. Our results are commercially applicable for achieving high-performance bio-imaging probes.

| S-EPMC9144094 | biostudies-literature

Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces.

Project description:The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces. Soft X-ray angle-resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana-zero-mode based topological qubits, and demonstrate that the fabrication process strongly influences the band offset, which in turn controls the topological phase diagrams. Since the method is transferable to other narrow gap semiconductors, it can be used more generally for engineering semiconductor-metal and semiconductor-superconductor interfaces in gate-tunable superconducting devices.

| S-EPMC7887586 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data