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Growth mechanism of self-catalyzed group III-V nanowires.

ABSTRACT: Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described.

SUBMITTER: Mandl B

PROVIDER: S-EPMC3028567 | biostudies-literature | 2010 Nov

REPOSITORIES: biostudies-literature

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Growth mechanism of self-catalyzed group III-V nanowires.

Mandl Bernhard B Stangl Julian J Hilner Emelie E Zakharov Alexei A AA Hillerich Karla K Dey Anil W AW Samuelson Lars L Bauer Günther G Deppert Knut K Mikkelsen Anders A

Nano letters 20101101 11

Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-orga ...[more]

PMID: 20939507

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