Mitigation of quantum dot cytotoxicity by microencapsulation.
Ontology highlight
ABSTRACT:
SUBMITTER: Romoser A
PROVIDER: S-EPMC3140988 | biostudies-literature |
REPOSITORIES: biostudies-literature
Similar Datasets
Project description:The potential cytotoxicity of cadmium selenide (CdSe) quantum dots (QDs) presents a barrier to their use in biomedical imaging or as diagnostic and therapeutic agents. Sulforaphane (SFN) is a chemoprotective compound derived from cruciferous vegetables which can up-regulate antioxidant enzymes and induce apoptosis and autophagy. This study reports the effects of SFN on CdSe QD-induced cytotoxicity in immortalised human hepatocytes and in the livers of mice. CdSe QDs induced dose-dependent cell death in hepatocytes with an IC50 = 20.4 μM. Pre-treatment with SFN (5 μM) increased cell viability in response to CdSe QDs (20 μM) from 49.5 to 89.3%. SFN induced a pro-oxidant effect characterized by depletion of intracellular reduced glutathione during short term exposure (3-6 h), followed by up-regulation of antioxidant enzymes and glutathione levels at 24 h. SFN also caused Nrf2 translocation into the nucleus, up-regulation of antioxidant enzymes and autophagy. siRNA knockdown of Nrf2 suggests that the Nrf2 pathway plays a role in the protection against CdSe QD-induced cell death. Wortmannin inhibition of SFN-induced autophagy significantly suppressed the protective effect of SFN on CdSe QD-induced cell death. Moreover, the role of autophagy in SFN protection against CdSe QD-induced cell death was confirmed using mouse embryonic fibroblasts lacking ATG5. CdSe QDs caused significant liver damage in mice, and this was decreased by SFN treatment. In conclusion, SFN attenuated the cytotoxicity of CdSe QDs in both human hepatocytes and in the mouse liver, and this protection was associated with the induction of Nrf2 pathway and autophagy.
| S-EPMC4581733 | biostudies-literature
Project description:As a zero-dimensional (0D) nanomaterial, graphene quantum dot (GQD) has a unique physical structure and electrochemical properties, which has been widely used in biomedical fields, such as bioimaging, biosensor, drug delivery, etc. Its biological safety and potential cytotoxicity to human and animal cells have become a growing concern in recent years. In particular, the potential DNA structure damage caused by GQD is of great importance but still obscure. In this study, molecular dynamics (MD) simulation was used to investigate the adsorption behavior and the structural changes of single-stranded (ssDNA) and double-stranded DNA (dsDNA) on the surfaces of GQDs with different sizes and oxidation. Our results showed that ssDNA can strongly adsorb and lay flat on the surface of GQDs and graphene oxide quantum dots (GOQDs), whereas dsDNA was preferentially oriented vertically on both surfaces. With the increase of GQDs size, more structural change of adsorbed ssDNA and dsDNA could be found, while the size effect of GOQD on the structure of ssDNA and dsDNA is not significant. These findings may help to improve the understanding of GQD biocompatibility and potential applications of GQD in the biomedical field.
| S-EPMC9654448 | biostudies-literature
Project description:CdSe semiconductor nanocrystal quantum dots are assembled into nanowire-like arrays employing microtubule fibers as nanoscale molecular "scaffolds." Spectrally and time-resolved energy-transfer analysis is used to assess the assembly of the nanoparticles into the hybrid inorganic biomolecular structure. Specifically, we demonstrate that a comprehensive study of energy transfer between quantum dot pairs on the biotemplate and, alternatively, between quantum dots and molecular dyes embedded in the microtubule scaffold comprises a powerful spectroscopic tool for evaluating the assembly process. In addition to revealing the extent to which assembly has occurred, the approach allows determination of particle-to-particle (and particle-to-dye) distances within the biomediated array. Significantly, the characterization is realized in situ, without need for further sample workup or risk of disturbing the solution-phase constructs. Furthermore, we find that the assemblies prepared in this way exhibit efficient quantum dot-quantum dot and quantum dot-dye energy transfer that affords faster energy-transfer rates compared to densely packed quantum dot arrays on planar substrates and to small-molecule-mediated quantum dot-dye couples, respectively.
| S-EPMC3062676 | biostudies-literature
Project description:Hybrid devices combining quantum dots with superconductors are important building blocks of conventional and topological quantum-information experiments. A requirement for the success of such experiments is to understand the various tunneling-induced non-local interaction mechanisms that are present in the devices, namely crossed Andreev reflection, elastic co-tunneling, and direct interdot tunneling. Here, we provide a theoretical study of a simple device that consists of two quantum dots and a superconductor tunnel-coupled to the dots, often called a Cooper-pair splitter. We study the three special cases where one of the three non-local mechanisms dominates, and calculate measurable ground-state properties, as well as the zero-bias and finite-bias differential conductance characterizing electron transport through this device. We describe how each non-local mechanism controls the measurable quantities, and thereby find experimental fingerprints that allow one to identify and quantify the dominant non-local mechanism using experimental data. Finally, we study the triplet blockade effect and the associated negative differential conductance in the Cooper-pair splitter, and show that they can arise regardless of the nature of the dominant non-local coupling mechanism. Our results should facilitate the characterization of hybrid devices, and their optimization for various quantum-information-related experiments and applications.
| S-EPMC6369982 | biostudies-literature
Project description:Silicon is widespread in modern electronics, but its electronic bandgap prevents the detection of infrared radiation at wavelengths above 1,100 nanometers, which limits its applications in multiple fields such as night vision, health monitoring and space navigation systems. It is therefore of interest to integrate silicon with infrared-sensitive materials to broaden its detection wavelength. Here we demonstrate a photovoltage triode that can use silicon as the emitter but is also sensitive to infrared spectra owing to the heterointegrated quantum dot light absorber. The photovoltage generated at the quantum dot base region, attracting holes from silicon, leads to high responsivity (exceeding 410 A·W-1 with Vbias of -1.5 V), and a widely self-tunable spectral response. Our device has the maximal specific detectivity (4.73 × 1013 Jones with Vbias of -0.4 V) at 1,550 nm among the infrared sensitized silicon detectors, which opens a new path towards infrared and visible imaging in one chip with silicon technology compatibility.
| S-EPMC8602655 | biostudies-literature
Project description:Double quantum dots (DQDs) are a versatile platform for solid-state physics, quantum computation and nanotechnology. The micro-fabrication techniques commonly used to fabricate DQDs are difficult to extend to the atomic scale. Using an alternative approach, which relies on scanning tunneling microscopy and spectroscopy, we prepared a minimal DQD in a wide band-gap semiconductor matrix. It is comprised of a pair of strongly coupled donor atoms that can each be doubly charged. The donor excitation diagram of this system mimicks the charge stability diagram observed in transport measurements of DQDs. We furthermore illustrate how the charge and spin degrees of freedom of the minimal DQD may be used to obtain a single quantum bit and to prepare a Bell state. The results open an intriguing perspective for quantum electronics with atomic-scale structures.
| S-EPMC5589847 | biostudies-literature
Project description:Colloidal quantum dots are emerging solution-processed materials for large-scale and low-cost photovoltaics. The recent advent of quantum dot inks has overcome the prior need for solid-state exchanges that previously added cost, complexity, and morphological disruption to the quantum dot solid. Unfortunately, these inks remain limited by the photocarrier diffusion length. Here we devise a strategy based on n- and p-type ligands that judiciously shifts the quantum dot band alignment. It leads to ink-based materials that retain the independent surface functionalization of quantum dots, and it creates distinguishable donor and acceptor domains for bulk heterojunctions. Interdot carrier transfer and exciton dissociation studies confirm efficient charge separation at the nanoscale interfaces between the two classes of quantum dots. We fabricate the first mixed-quantum-dot solar cells and achieve a power conversion of 10.4%, which surpasses the performance of previously reported bulk heterojunction quantum dot devices fully two-fold, indicating the potential of the mixed-quantum-dot approach.
| S-EPMC5673898 | biostudies-literature
Project description:In this work, quantum dots (QDs) of various heterostructured compositions and shell thicknesses are used as Förster or fluorescence resonance energy transfer (FRET) donors and acceptors to optimize QD-QD FRET sensing through materials design. While several reports have highlighted the advantages of using QD-dye, rather than dye-dye, FRET in sensing applications, QD-QD FRET has lagged behind in development as a result of high background signal from direct acceptor excitation. However, in designing sensors for longitudinal studies, QD-dye sensors are limited by the photostability of the fluorescent dye. While fluorescence generally affords higher sensitivity than absorbance-based readouts, the instrumentation needed for detecting fluorescence can be expensive, motivating the development of sensors bright enough to be seen by eye or imaged with cheap consumer electronics. Harnessing the exceptional brightness of QDs, our study focuses on the development of QD-QD FRET pairs where color change is achieved for visual readout and instrument-free sensing. We demonstrate that bulk semiconductor material characteristics can be used to a priori predict and tailor the behavior of QD-QD FRET systems, and our findings show that it is possible to create QD donors that are brighter than their acceptors through concerted compositional and morphological choices in heterostructured QDs. This is significant for developing visual sensors, as we show that the most profound color change occurs when the direct acceptor emission is lower than that of the donor. Finally, the use of an optimal cadmium-free QD-QD FRET pair is presented in a pH sensor that shows a large range of pH-dependent color change with bright, instrument-free readout.
| S-EPMC8275315 | biostudies-literature
Project description:Quantum dots (QDs) have emerged as an important class of materials for diverse applications such as solid-state lighting, energy conversion, displays, biomedicine, and plasmonics due to their excellent photonic properties and durability. Soft lithography, inkjet printing, nanoimprinting, and polymer deep-pen lithography are primary lithography techniques employed to implement micro-patterns with QDs, however, there are limited reports on QD photolithography using conventional photolithography processes suitable for mass production. This study reports a QD photolithography technique using a custom-developed QD photoresist made of an organic-inorganic hybrid coating layer. Using this QD photoresist, various QD micro-patterns, including red or green micro lines, RGB color filters for smartphone displays at 340 ppi, and atypical micro logo patterns of the Korea University, were successfully fabricated. Furthermore, various process parameters were developed for the QD photolithography with this custom QD photoresist, and the optical properties of the QD films were also investigated. To demonstrate its applicability in contemporary smartphone displays, the color coordinates of the QD films were compared to those of the BT.2020 standard. The chromaticity of the QD photoresist in CIE 1931 color space covered 98.7% of the NTSC (1987) area while providing more expansive color space. Overall, the QD photoresist and its photolithography techniques reported in this study hold great promise in various fields of QD-based applications, including bio-labeling, optical detectors, and solar cells.
| S-EPMC9417674 | biostudies-literature
Project description:Graphene quantum dots (GQDs) have received much attention due to their novel phenomena of charge transport and light absorption/emission. The optical transitions are known to be available up to ~6?eV in GQDs, especially useful for ultraviolet (UV) photodetectors (PDs). Thus, the demonstration of photodetection gain with GQDs would be the basis for a plenty of applications not only as a single-function device in detecting optical signals but also a key component in the optoelectronic integrated circuits. Here, we firstly report high-efficient photocurrent (PC) behaviors of PDs consisting of multiple-layer GQDs sandwiched between graphene sheets. High detectivity (>10(11)?cm Hz(1/2)/W) and responsivity (0.2 ~ 0.5 A/W) are achieved in the broad spectral range from UV to near infrared. The observed unique PD characteristics prove to be dominated by the tunneling of charge carriers through the energy states in GQDs, based on bias-dependent variations of the band profiles, resulting in novel dark current and PC behaviors.
| S-EPMC4083259 | biostudies-literature