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Coherent magnetic semiconductor nanodot arrays.

ABSTRACT: In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.

SUBMITTER: Wang Y

PROVIDER: S-EPMC3211181 | biostudies-literature | 2011 Feb

REPOSITORIES: biostudies-literature

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Coherent magnetic semiconductor nanodot arrays.

Wang Yong Y Xiu Faxian F Wang Ya Y Zou Jin J Beyermann Ward P WP Zhou Yi Y Wang Kang L KL

Nanoscale research letters 20110211 1

In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to p ...[more]

PMID: 21711627

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