Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate.
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ABSTRACT:
SUBMITTER: Kwak K
PROVIDER: S-EPMC3230961 | biostudies-literature | 2010
REPOSITORIES: biostudies-literature
Publications
Characterization of a photodiode coupled with a Si nanowire-FET on a plastic substrate.
Kwak Kiyeol K Cho Kyoungah K Kim Sangsig S
Sensors (Basel, Switzerland) 20101012 10
In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of -9 V, the photocurrent ...[more]
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