High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

ABSTRACT: The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device si

SUBMITTER: Hu JM 

PROVIDER: S-EPMC3482632 | biostudies-literature | 2011 Nov

REPOSITORIES: biostudies-literature