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High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

ABSTRACT: The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

SUBMITTER: Hu JM 

PROVIDER: S-EPMC3482632 | biostudies-literature | 2011 Nov

REPOSITORIES: biostudies-literature

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High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

Hu Jia-Mian JM   Li Zheng Z   Chen Long-Qing LQ   Nan Ce-Wen CW  

Nature communications 20111122

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temp  ...[more]