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CVD growth of large area smooth-edged graphene nanomesh by nanosphere lithography.

ABSTRACT: Current etching routes to process large graphene sheets into nanoscale graphene so as to open up a bandgap tend to produce structures with rough and disordered edges. This leads to detrimental electron scattering and reduces carrier mobility. In this work, we present a novel yet simple direct-growth strategy to yield graphene nanomesh (GNM) on a patterned Cu foil via nanosphere lithography. Raman spectroscopy and TEM characterizations show that the as-grown GNM has significantly smoother edges than post-growth etched GNM. More importantly, the transistors based on as-grown GNM with neck widths of 65-75 nm have a near 3-fold higher mobility than those derived from etched GNM with the similar neck widths.

SUBMITTER: Wang M

PROVIDER: S-EPMC3566595 | biostudies-literature | 2013

REPOSITORIES: biostudies-literature

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CVD growth of large area smooth-edged graphene nanomesh by nanosphere lithography.

Wang Min M Fu Lei L Gan Lin L Zhang Chaohua C Rümmeli Mark M Bachmatiuk Alicja A Huang Kai K Fang Ying Y Liu Zhongfan Z

Scientific reports 20130207

Current etching routes to process large graphene sheets into nanoscale graphene so as to open up a bandgap tend to produce structures with rough and disordered edges. This leads to detrimental electron scattering and reduces carrier mobility. In this work, we present a novel yet simple direct-growth strategy to yield graphene nanomesh (GNM) on a patterned Cu foil via nanosphere lithography. Raman spectroscopy and TEM characterizations show that the as-grown GNM has significantly smoother edges t ...[more]

PMID: 23393620

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