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Direct growth of vertically-oriented graphene for field-effect transistor biosensor.

ABSTRACT: A sensitive and selective field-effect transistor (FET) biosensor is demonstrated using vertically-oriented graphene (VG) sheets labeled with gold nanoparticle (NP)-antibody conjugates. VG sheets are directly grown on the sensor electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as the sensing channel. The protein detection is accomplished through measuring changes in the electrical signal from the FET sensor upon the antibody-antigen binding. The novel biosensor with unique graphene morphology shows high sensitivity (down to ~2 ng/ml or 13 pM) and selectivity towards specific proteins. The PECVD growth of VG presents a one-step and reliable approach to prepare graphene-based electronic biosensors.

SUBMITTER: Mao S

PROVIDER: S-EPMC3631944 | biostudies-literature | 2013

REPOSITORIES: biostudies-literature

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Direct growth of vertically-oriented graphene for field-effect transistor biosensor.

Mao Shun S Yu Kehan K Chang Jingbo J Steeber Douglas A DA Ocola Leonidas E LE Chen Junhong J

Scientific reports 20130101

A sensitive and selective field-effect transistor (FET) biosensor is demonstrated using vertically-oriented graphene (VG) sheets labeled with gold nanoparticle (NP)-antibody conjugates. VG sheets are directly grown on the sensor electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as the sensing channel. The protein detection is accomplished through measuring changes in the electrical signal from the FET sensor upon the antibody-antigen binding. The novel biose ...[more]

PMID: 23603871

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