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Non-volatile memory based on the ferroelectric photovoltaic effect.

ABSTRACT: The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10??s programming and ~10?ms erasing time. Furthermore, it can only withstand ~10(5) rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique.

SUBMITTER: Guo R

PROVIDER: S-EPMC3709492 | biostudies-literature | 2013

REPOSITORIES: biostudies-literature

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Non-volatile memory based on the ferroelectric photovoltaic effect.

Guo Rui R You Lu L Zhou Yang Y Lim Zhi Shiuh ZS Zou Xi X Chen Lang L Ramesh R R Wang Junling J

Nature communications 20130101

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~10(5) rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate tha ...[more]

PMID: 23756366

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