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Genetic design of enhanced valley splitting towards a spin qubit in silicon.

ABSTRACT: The long spin coherence time and microelectronics compatibility of Si makes it an attractive material for realizing solid-state qubits. Unfortunately, the orbital (valley) degeneracy of the conduction band of bulk Si makes it difficult to isolate individual two-level spin-1/2 states, limiting their development. This degeneracy is lifted within Si quantum wells clad between Ge-Si alloy barrier layers, but the magnitude of the valley splittings achieved so far is small--of the order of 1 meV or less--degrading the fidelity of information stored within such a qubit. Here we combine an atomistic pseudopotential theory with a genetic search algorithm to optimize the structure of layered-Ge/Si-clad Si quantum wells to improve this splitting. We identify an optimal sequence of multiple Ge/Si barrier layers that more effectively isolates the electron ground state of a Si quantum well and increases the valley splitting by an order of magnitude, to ~9 meV.

SUBMITTER: Zhang L

PROVIDER: S-EPMC3778719 | biostudies-literature | 2013

REPOSITORIES: biostudies-literature

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Genetic design of enhanced valley splitting towards a spin qubit in silicon.

Zhang Lijun L Luo Jun-Wei JW Saraiva Andre A Koiller Belita B Zunger Alex A

Nature communications 20130101

The long spin coherence time and microelectronics compatibility of Si makes it an attractive material for realizing solid-state qubits. Unfortunately, the orbital (valley) degeneracy of the conduction band of bulk Si makes it difficult to isolate individual two-level spin-1/2 states, limiting their development. This degeneracy is lifted within Si quantum wells clad between Ge-Si alloy barrier layers, but the magnitude of the valley splittings achieved so far is small--of the order of 1 meV or le ...[more]

PMID: 24013452

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