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Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.

ABSTRACT: High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5?nm)/Al2O3 (3.6?nm) superlattice channel structure exhibited high field effect mobility of 27.8?cm(2)/Vs, and threshold voltage shift of only < 0.5?V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers.

SUBMITTER: Ahn CH

PROVIDER: S-EPMC3781393 | biostudies-literature | 2013

REPOSITORIES: biostudies-literature

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Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.

Ahn Cheol Hyoun CH Senthil Karuppanan K Cho Hyung Koun HK Lee Sang Yeol SY

Scientific reports 20130101

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TF ...[more]

PMID: 24061388

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Project description:Large-scale commercial synthesis of bulk-heterojunction (BHJ) solar cell materials is very challenging and both time and energy consuming. Synthesis of π-conjugated polymers (CPs) with uniform batch-to-batch molecular weight and low dispersity is a key requirement for better reproducibility of high-efficiency polymer solar cells. Herein, a conjugated polymer (CP) PTB7-Th, well known for its high performance, has been synthesized with high molecular weight and low dispersity in a closed microwave reactor. The microwave reaction procedure is known to be more controlled and consumes less energy. The precursors were strategically reacted for different reaction time durations to obtain the optimum molecular weight. All different CPs were well characterized using 1H NMR, gel permeation chromatography (GPC), UV-vis, photoluminescence (PL), electron spin resonance (ESR), and Raman spectroscopy, whereas the film morphology was extensively studied via atomic force microscopy (AFM) and grazing incidence X-ray diffraction (GIXRD) techniques. The effect of molecular weight on a conventional BHJ solar cell with PC71BM acceptor was investigated to derive systematic structure-property relationships. The CP obtained after 35 min of reaction time and integrated into BHJ devices under ambient conditions provided the best performance with a power conversion efficiency (PCE) of 8.09%, which was quite similar to the results of CPs synthesized via a thermal route. An enhanced PCE of 8.47% was obtained for the optimized polymer (35 min microwave reaction product) when device fabrication was carried out inside a glovebox. The organic thin-film transistor (OTFT) device with the microwave-synthesized CP displayed better hole mobility (0.137 cm2 V-1 s-1) as compared to that with the thermally synthesized CP. This study also proved that the device stability and reproducibility of the microwave-synthesized CP were much better and more consistent than those of the thermally developed CP.

Dataset Information

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.

Publications

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.

Similar Datasets

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