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Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

ABSTRACT: Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.

SUBMITTER: Timm R

PROVIDER: S-EPMC3834301 | biostudies-literature | 2013 Nov

REPOSITORIES: biostudies-literature

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Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

Timm Rainer R Persson Olof O Engberg David L J DL Fian Alexander A Webb James L JL Wallentin Jesper J Jönsson Andreas A Borgström Magnus T MT Samuelson Lars L Mikkelsen Anders A

Nano letters 20131002 11

Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V ...[more]

PMID: 24059470

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