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Single-photon property characterization of 1.3 ?m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes.

ABSTRACT: We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 ?m emissions of InAs/GaAs QDs to 0.9 ?m for detection by silicon avalanche photodiodes. The obtained g((2))(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 ?m single-photon source based on semiconductor materials.

SUBMITTER: Zhou PY

PROVIDER: S-EPMC3887382 | biostudies-literature | 2014

REPOSITORIES: biostudies-literature

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Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes.

Zhou P Y PY Dou X M XM Wu X F XF Ding K K Li M F MF Ni H Q HQ Niu Z C ZC Jiang D S DS Sun B Q BQ

Scientific reports 20140110

We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 μm emissions of InAs/GaAs QDs to 0.9 μm for detection by silicon avalanche photodiodes. The obtained g((2))(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and eff ...[more]

PMID: 24407193

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