Ontology highlight
ABSTRACT:
SUBMITTER: Conesa-Boj S
PROVIDER: S-EPMC3890218 | biostudies-literature | 2014 Jan
REPOSITORIES: biostudies-literature
Nano letters 20131218 1
With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-controlled for convenient device processing, and gold-free for compatibility with standard complementary metal-oxide-semiconductor (CMOS) processing tools. Here we demonstrate large area vertical GaAsxSb1-x nanowire arrays ...[more]