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Photoresist-free fully self-patterned transparent amorphous oxide thin-film transistors obtained by sol-gel process.

ABSTRACT: We demonstrated self-patterned solution-processed amorphous oxide semiconductor thin-film transistors (TFTs) using photosensitive sol-gels. The photosensitive sol-gels were synthesized by adding ?-diketone compounds, i.e., benzoylacetone and acetylacetone, to sol-gels. The chemically modified photosensitive sol-gels showed a high optical absorption at specific wavelengths due to the formation of metal chelate bonds. Photoreactions of the modified solutions enabled a photoresist-free process. Moreover, Zn-Sn-O with a high Sn ratio, which is hard to wet-etch using conventional photolithography due to its chemical durability, was easily patterned via the self-patterning process. Finally, we fabricated a solution-processed oxide TFT that included fully self-patterned electrodes and an active layer.

SUBMITTER: Lim HS

PROVIDER: S-EPMC3971413 | biostudies-literature | 2014 Apr

REPOSITORIES: biostudies-literature

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Photoresist-free fully self-patterned transparent amorphous oxide thin-film transistors obtained by sol-gel process.

Lim Hyun Soo HS Rim You Seung YS Kim Hyun Jae HJ

Scientific reports 20140401

We demonstrated self-patterned solution-processed amorphous oxide semiconductor thin-film transistors (TFTs) using photosensitive sol-gels. The photosensitive sol-gels were synthesized by adding β-diketone compounds, i.e., benzoylacetone and acetylacetone, to sol-gels. The chemically modified photosensitive sol-gels showed a high optical absorption at specific wavelengths due to the formation of metal chelate bonds. Photoreactions of the modified solutions enabled a photoresist-free process. Mor ...[more]

PMID: 24686314

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