Possible ferroelectricity in perovskite oxynitride SrTaO2N epitaxial thin films
Ontology highlight
ABSTRACT:
SUBMITTER: Oka D
PROVIDER: S-EPMC4023398 | biostudies-literature | 2014 Jan
REPOSITORIES: biostudies-literature
Similar Datasets
Project description:Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2-5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm2. The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 1010 cycles is obtained in 5 at. % La-doped films.
| S-EPMC8613842 | biostudies-literature
Project description:The NaMnF3 fluoride-perovskite has been found, theoretically, to be ferroelectric under epitaxial strain becoming a promising alternative to conventional oxides for multiferroic applications. Nevertheless, this fluoroperovskite has not been experimentally verified to be ferroelectric so far. Here we report signatures of room temperature ferroelectricity observed in perovskite NaMnF3 thin films grown on SrTiO3. Using piezoresponse force microscopy, we studied the evolution of ferroelectric polarization in response to external and built-in electric fields. Density functional theory calculations were also performed to help understand the strong competition between ferroelectric and paraelectric phases as well as the profound influences of strain. These results, together with the magnetic order previously reported in the same material, pave the way to future multiferroic and magnetoelectric investigations in fluoroperovskites.
| S-EPMC5543180 | biostudies-literature
Project description:Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orthorhombic phase of hafnia-based films such as controlling the growth kinetics and mechanical confinement. Here, we demonstrate a key interface engineering strategy to stabilize and enhance the ferroelectric orthorhombic phase of the Hf0.5Zr0.5O2 thin film by deliberately controlling the termination of the bottom La0.67Sr0.33MnO3 layer. We find that the Hf0.5Zr0.5O2 films on the MnO2-terminated La0.67Sr0.33MnO3 have more ferroelectric orthorhombic phase than those on the LaSrO-terminated La0.67Sr0.33MnO3, while with no wake-up effect. Even though the Hf0.5Zr0.5O2 thickness is as thin as 1.5 nm, the clear ferroelectric orthorhombic (111) orientation is observed on the MnO2 termination. Our transmission electron microscopy characterization and theoretical modelling reveal that reconstruction at the Hf0.5Zr0.5O2/ La0.67Sr0.33MnO3 interface and hole doping of the Hf0.5Zr0.5O2 layer resulting from the MnO2 interface termination are responsible for the stabilization of the metastable ferroelectric phase of Hf0.5Zr0.5O2. We anticipate that these results will inspire further studies of interface-engineered hafnia-based systems.
| S-EPMC10063548 | biostudies-literature
Project description:Perovskite oxides and organic-inorganic halide perovskite materials, with numerous fascinating features, have been subjected to extensive studies. Most of the properties of perovskite materials are dependence on their ferroelectricity that denoted by remanent polarization (Pr). Thus, the increase of Pr in perovskite films is mainly an effort in material physics. At present, commonplace improvement schemes, i.e., controlling material crystallinity, and post-annealing by using a high-temperature process, are normally used. However, a simpler and temporal strategy for Pr improvement is always unavailable to perovskite material researchers. In this study, an organic coating layer, low-temperature, and vacuum-free strategy is proposed to improve the Pr, directly increasing the Pr from 36 to 56 µC cm-2. Further study finds that the increased Pr originates from the suppression of the oxygen defects and Ti defects. This organic coating layer strategy for passivating the defects may open a new way for the preparation of higher-performance and cost-effective perovskite products, further improving its prospective for application in the electron devices field.
| S-EPMC11336970 | biostudies-literature
Project description:The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices.
| S-EPMC4981861 | biostudies-literature
Project description:Actinide materials have various applications that range from nuclear energy to quantum computing. Most current efforts have focused on bulk actinide materials. Tuning functional properties by using strain engineering in epitaxial thin films is largely lacking. Using uranium dioxide (UO2 ) as a model system, in this work, the authors explore strain engineering in actinide epitaxial thin films and investigate the origin of induced ferromagnetism in an antiferromagnet UO2 . It is found that UO2+ x thin films are hypostoichiometric (x<0) with in-plane tensile strain, while they are hyperstoichiometric (x>0) with in-plane compressive strain. Different from strain engineering in non-actinide oxide thin films, the epitaxial strain in UO2 is accommodated by point defects such as vacancies and interstitials due to the low formation energy. Both epitaxial strain and strain relaxation induced point defects such as oxygen/uranium vacancies and oxygen/uranium interstitials can distort magnetic structure and result in magnetic moments. This work reveals the correlation among strain, point defects and ferromagnetism in strain engineered UO2+ x thin films and the results offer new opportunities to understand the influence of coupled order parameters on the emergent properties of many other actinide thin films.
| S-EPMC9685444 | biostudies-literature
Project description:In condensed matter physics, oxide materials show various intriguing physical properties. Therefore, many efforts are made in this field to develop functional oxides. Due to the excellent potential for tin-based perovskite oxides, an expansion of new related functional compounds is crucial. This work uses a heteroepitaxial approach supported by theoretical calculation to stabilize PbSnO3 thin films with different orientations. The analyses of X-ray diffraction and transmission electron microscopy unveil the structural information. A typical antiferroelectric feature with double hysteresis and butterfly loops is observed through electrical characterizations consistent with the theoretical prediction. The phase transition is monitored, and the transition temperatures are determined based on temperature-dependent structural and electrical characterizations. Furthermore, the microscopic antiferroelectric order is noticed under atomic resolution images via scanning transmission electron microscopy. This work offers a breakthrough in synthesizing epitaxial PbSnO3 thin films and comprehensively understanding its anisotropic antiferroelectric behavior.
| S-EPMC9762279 | biostudies-literature
Project description:Perovskite oxynitrides have been studied with regard to their visible light-driven photocatalytic activity and novel electronic functionalities. The assessment of the intrinsic physical and/or electrochemical properties of oxynitrides requires the epitaxial growth of single-crystalline films. However, the heteroepitaxy of perovskite oxynitrides has not yet matured compared to the progress realized in work with perovskite oxides. Herein, we report the heteroepitaxial growth of CaTaO2N thin films with (100)pc, (110)pc, and (111)pc crystallographic surface orientations (where the subscript pc denotes a pseudocubic cell) on SrTiO3 substrates using reactive radio frequency magnetron sputtering, along with investigations of crystallinity and surface morphology. Irrespective of surface orientation, stoichiometric CaTaO2N epitaxial thin films were grown coherently on SrTiO3 substrates and showed clear step and terrace surfaces in the case of low values of film thickness of approximately 20 nm. A (110)pc-oriented film was also more highly crystalline than (100)pc- and (111)pc-oriented specimens. This relationship between crystallinity and surface orientation is ascribed to the number of inequivalent in-plane rotational domains, which stems from the symmetry mismatch between the orthorhombic CaTaO2N and cubic SrTiO3. A CaTaO2N thin film grown on a lattice- and symmetry-matched orthorhombic DyScO3 substrate exhibited a significant crystallinity and a clear step and terrace surface even though the film was thick (?190 nm). These results are expected to assist in developing the heteroepitaxial growth of high-quality perovskite oxynitride thin films.
| S-EPMC7288696 | biostudies-literature
Project description:The synthesis of perovskite oxynitrides, which are promising photoanode candidates for solar energy conversion, is normally accomplished by high-temperature ammonolysis of oxides and carbonate precursors, thus making the deposition of their planar films onto conductive substrates challenging. Here, we proposed a facile strategy to prepare a series of perovskite oxynitride films. Taking SrTaO2N as a prototype, we prepared SrTaO2N films on Ta foils under NH3 flow by utilizing the vaporized SrCl2/SrCO3 eutectic salt. The SrTaO2N films exhibit solar water-splitting photocurrents of 3.0 mA cm-2 at 1.23 V vs. RHE (reversible hydrogen electrode), which increases by 270% compared to the highest photocurrent (1.1 mA cm-2 at 1.23 V vs. RHE) of SrTaO2N reported in the literature. This strategy may also be applied to directly prepare a series of perovskite oxynitride films on conductive substrates such as ATaO2N (A = Ca, Ba) and ANbO2N (A = Sr, Ba).
| S-EPMC6946269 | biostudies-literature
Project description:The oxygen octahedral rotation (OOR) forms fundamental atomic distortions and symmetries in perovskite oxides and definitely determines their properties and functionalities. Therefore, epitaxial strain and interfacial structural coupling engineering have been developed to modulate the OOR patterns and explore novel properties, but it is difficult to distinguish the 2 mechanisms. Here, different symmetries are induced in Na0.5Bi0.5TiO3 (NBT) epitaxial films by interfacial oxygen octahedral coupling rather than epitaxial strain. The NBT film grown on the Nb:SrTiO3 substrate exhibits a paraelectric tetragonal phase, while with La0.5Sr0.5MnO3 as a buffer layer, a monoclinic phase and robust ferroelectricity are obtained, with a remanent polarization of 42 μC cm-2 and a breakdown strength of 7.89 MV cm-1, which are the highest record among NBT-based films. Moreover, the interfacial oxygen octahedral coupling effect is demonstrated to propagate to the entire thickness of the film, suggesting an intriguing long-range effect. This work provides a deep insight into understanding the structure modulation in perovskite heterostructures and an important avenue for achieving unique functionalities.
| S-EPMC10351392 | biostudies-literature