Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility.

ABSTRACT: Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm(2)V(-1)s(-1), large memory window (?16 V), low read voltages (?-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

SUBMITTER: Caraveo-Frescas JA

PROVIDER: S-EPMC4050383 | biostudies-literature | 2014 Jun

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility.

Caraveo-Frescas J A JA Khan M A MA Alshareef H N HN

Scientific reports 20140610

Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm(2)V(-1)s(-1), large memory window (∼16 V), low read voltages (∼-1 V), and excellent retention characteristics up to 5000 sec ...[more]

PMID: 24912617

Similar Datasets

High-Hole-Mobility Metal-Organic Framework as Dopant-Free Hole Transport Layer for Perovskite Solar Cells.

Project description:A dopant-free hole transport layer with high mobility and a low-temperature process is desired for optoelectronic devices. Here, we study a metal-organic framework material with high hole mobility and strong hole extraction capability as an ideal hole transport layer for perovskite solar cells. By utilizing lifting-up method, the thickness controllable floating film of Ni3(2,3,6,7,10,11-hexaiminotriphenylene)2 at the gas-liquid interface is transferred onto ITO-coated glass substrate. The Ni3(2,3,6,7,10,11-hexaiminotriphenylene)2 film demonstrates high compactness and uniformity. The root-mean-square roughness of the film is 5.5 nm. The ultraviolet photoelectron spectroscopy and the steady-state photoluminescence spectra exhibit the Ni3(HITP)2 film can effectively transfer holes from perovskite film to anode. The perovskite solar cells based on Ni3(HITP)2 as a dopant-free hole transport layer achieve a champion power conversion efficiency of 10.3%. This work broadens the application of metal-organic frameworks in the field of perovskite solar cells.

| S-EPMC8738790 | biostudies-literature

Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application.

Project description:As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(001) surface. Our first-principle calculations show that a single layer of SnO on Si(001) surface is a semiconductor, but a bilayer SnO on the same surface is metallic. This metal-semiconductor dichotomy allows construction of single-2D-material-based electronic devices with low contact resistance and low leakage currents. In particular, due to the interaction between Sn and the Si substrate, the semiconducting monolayer-SnO/Si(001) has a highly anisotropic band structure with a much lighter hole effective mass along one direction than that of Si and most other 2D materials, indicating a high carrier mobility. Furthermore, by combining density functional theory and nonequilibrium Green's function method, we directly investigate the transport characteristics of a field effect transistor based on the proposed heterostructures, which shows very low contact resistance, negligible leakage current, and easy gate control at a compact channel length.

| S-EPMC5451440 | biostudies-literature

A stable solution-processed polymer semiconductor with record high-mobility for printed transistors.

Project description:Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors - fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems.

| S-EPMC3474992 | biostudies-literature

Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer.

Project description:Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect mobility (μFE) and large on-current/off-current (ION/IOFF) is challenging. In this report, coplanar top-gate nanosheet SnO p-TFT with high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2 × 105, and sharp transistor's turn-on subthreshold slopes (SS) of 526 mV/decade were achieved simultaneously. Secondary ion mass spectrometry analysis revealed that the excellent device integrity was strongly related to process temperature, because the HfO2/SnO interface and related μFE were degraded by Sn and Hf inter-diffusion at an elevated temperature due to weak Sn-O bond enthalpy. Oxygen content during process is also crucial because the hole-conductive p-type SnO channel is oxidized into oxygen-rich n-type SnO2 to demote the device performance. The hole μFE, ION/IOFF, and SS values obtained in this study are the best-reported data to date for top-gate p-TFT device, thus facilitating the development of monolithic 3D ICs on the backend dielectric of IC chips.

| S-EPMC7823917 | biostudies-literature

Limitations of a polymer-based hole transporting layer for application in planar inverted perovskite solar cells.

Project description:Planar inverted lead halide photovoltaics demonstrate remarkable photoconversion properties when employing poly(triarylamine) (PTAA) as a hole transporting layer. Herein, we elucidate the effect of ambient ultraviolet (UV) degradation on the structural and operational stability of the PTAA hole transporter through a series of rigorous optoelectrical characterization protocols. Due attention was given to the interplay between the polymer and perovskite absorber, both within the framework of a bilayer structure and fully assembled solar cells. The obtained results imply that UV degradation exerts a major influence on the structural integrity of PTAA, rather than on the interface with the perovskite light harvester. Moreover, UV exposure induced more adverse effects on tested samples than environmental humidity and oxygen, contributing more to the overall reduction of charge extraction properties of PTAA, as well as increased defect population upon prolonged UV exposure.

| S-EPMC9417823 | biostudies-literature

Fluorinated Reduced Graphene Oxide as an Efficient Hole-Transport Layer for Efficient and Stable Polymer Solar Cells.

Project description:In this work, we have rationally designed and successfully synthesized a reduced graphene oxide (GO) functionalized with fluorine atoms (F-rGO) as a hole-transport layer (HTL) for polymer solar cells (PSCs). The resultant F-rGO has an excellent dispersibility in dimethylformamide without any surfactants, leading to a good film-forming property of F-rGO for structuring a stable interface. The recovery of conjugated C=C bonds in GO oxide after reduction increases the conductivity of F-rGO, which enhances the short-circuit current density of photovoltaic devices from 15.65 to 16.89 mA/cm2. A higher work function (WF) (5.1 eV) of F-rGO than that of GO (4.9 eV) is attributed to the fluorine group with a high electronegativity. Naturally, the better-matched WF with the highest occupied molecular orbital level of the PTB7-Th (5.22 eV) donor induces an improved energy alignment in devices, resulting in a superior open-circuit voltage of the device (0.776 vs 0.786 V). Consequently, the device with F-rGO as the HTL achieves a higher power conversion efficiency (8.6%) with long-term stability than that of the devices with GO HTLs and even higher than that of the poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS) control device. These results clearly verify that the F-rGO is a promising hole-transport material and an ideal replacement for conventional PEDOT/PSS, further promoting the realization of low-cost, solution-processed, high-performance, and high-stability PSCs.

| S-EPMC6641134 | biostudies-literature

Metal-Organic Decomposition-Mediated Nanoparticulate Vanadium Oxide Hole Transporting Buffer Layer for Polymer Bulk-Heterojunction Solar Cells.

Project description:In this study, a solution-processable compact vanadium oxide (V2O5) film with a globular nanoparticulate structure is introduced to the hole transport layer (HTL) of polymer bulk-heterojunction based solar cells comprised of PTB7:PC70BM by using a facile metal-organic decomposition method to replace the conventionally utilized poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). For this, a biocompatible structure-determining agent, polyethylene glycol (PEG, Mn 300), is used as an additive in the precursor to form the nanoparticulate compact V2O5 (hereafter referred to as NP-V2O5) film, which possesses an outstandingly smooth surface morphology. The introduction of NP-V2O5 HTL via the solution process with a neutral pH condition successfully improved the stability by preventing the decomposition of indium tin oxide (ITO) glass and the penetration of heavy-metal components and moisture, which are considered as the crucial drawbacks of using PEDOT:PSS. Over 1440 h (60 days) of the stability test, an organic solar cell (OSC) with NP-V2O5 showed a significant durability, maintaining 82% of its initial power conversion efficiency (PCE), whereas an OSC with PEDOT:PSS maintained 51% of its initial PCE. Furthermore, due to the positive effects of the modified surface properties of NP-V2O5, the PCE was slightly enhanced from 7.47% to 7.89% with a significant improvement in the short-circuit current density and fill factor.

| S-EPMC7465065 | biostudies-literature

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating.

Project description:Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement.

| S-EPMC4568540 | biostudies-other

Exploration and Optimization of the Polymer-Modified NiO<sub>x</sub> Hole Transport Layer for Fabricating Inverted Perovskite Solar Cells.

Project description:The recombination of charge carriers at the interface between carrier transport layers such as nickel oxide (NiOx) and the perovskite absorber has long been a challenge in perovskite solar cells (PSCs). To address this issue, we introduced a polymer additive poly(vinyl butyral) into NiOx and subjected it to high-temperature annealing to form a void-containing structure. The formation of voids is confirmed to increase light transmittance and surface area of NiOx, which is beneficial for light absorption and carrier separation within PSCs. Experimental results demonstrate that the incorporation of the polymer additive helped to enhance the hole conductivity and carrier extraction of NiOx with a higher Ni3+/Ni2+ ratio. This also optimized the energy levels of NiOx to match with the perovskite to raise the open-circuit voltage to 1.01 V. By incorporating an additional NiOx layer beneath the polymer-modified NiOx, the device efficiency was further increased as verified from the dark current measurement of devices.

| S-EPMC11206296 | biostudies-literature

Prototyping a Versatile Two-Layer Multi-Channel Microfluidic Device for Direct-Contact Cell-Vessel Co-Culture.

Project description:Microfluidic devices are gaining increasing popularity due to their wide applications in various research areas. Herein, we propose a two-layer multi-channel microfluidic device allowing for direct-contact cell-vessel co-culture. Using the device, we built a co-culture model of the outer blood-retina barrier (oBRB), mimicking the in vivo retinal pigment epithelial cells-Bruch membrane-fenestrated choroids. To demonstrate the versatility of the design, we further modified the device by inserting platinum electrodes for trans-epithelial electrical resistance (TEER) measurement, demonstrating the feasibility of on-chip assessment of the epithelial barrier integrity. Our proposed design allows for direct-contact co-culture of cell-cell or cell-vessel, modifiable for real-time evaluation of the state of the epithelial monolayers.

| S-EPMC7019926 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data