Ontology highlight
ABSTRACT:
SUBMITTER: Caraveo-Frescas JA
PROVIDER: S-EPMC4050383 | biostudies-literature | 2014 Jun
REPOSITORIES: biostudies-literature
Scientific reports 20140610
Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm(2)V(-1)s(-1), large memory window (∼16 V), low read voltages (∼-1 V), and excellent retention characteristics up to 5000 sec ...[more]