Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility.

ABSTRACT: Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm(2)V(-1)s(-1), large memory window (?16 V), low read voltages (?-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

SUBMITTER: Caraveo-Frescas JA 

PROVIDER: S-EPMC4050383 | biostudies-literature | 2014 Jun

REPOSITORIES: biostudies-literature