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Heterojunction hybrid devices from vapor phase grown MoS2.

ABSTRACT: We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS2) layer transferred onto p-type silicon. The fabrication is scalable as the MoS2 is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS2 layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS2. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.

SUBMITTER: Yim C

PROVIDER: S-EPMC4074969 | biostudies-literature | 2014 Jun

REPOSITORIES: biostudies-literature

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Heterojunction hybrid devices from vapor phase grown MoS2.

Yim Chanyoung C O'Brien Maria M McEvoy Niall N Riazimehr Sarah S Schäfer-Eberwein Heiko H Bablich Andreas A Pawar Ravinder R Iannaccone Giuseppe G Downing Clive C Fiori Gianluca G Lemme Max C MC Duesberg Georg S GS

Scientific reports 20140626

We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS2) layer transferred onto p-type silicon. The fabrication is scalable as the MoS2 is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS2 layer. The diodes have a broad spectral response due to direct and indirect band transitions of ...[more]

PMID: 24975741

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