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Weak antilocalization effect and noncentrosymmetric superconductivity in a topologically nontrivial semimetal LuPdBi.


ABSTRACT: A large number of half-Heusler compounds have been recently proposed as three-dimensional (3D) topological insulators (TIs) with tunable physical properties. However, no transport measurements associated with the topological surface states have been observed in these half-Heusler candidates due to the dominating contribution from bulk electrical conductance. Here we show that, by reducing the mobility of bulk carriers, a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hallmarks of topological surface states, was experimentally revealed from the tilted magnetic field dependence of magnetoconductance in a topologically nontrivial semimetal LuPdBi. Besides the observation of a 2D WAL effect, a superconducting transition was revealed at Tc ~ 1.7 K in the same bulk LuPdBi. Quantitative analysis within the framework of a generalized BCS theory leads to the conclusion that the noncentrosymmetric superconductivity of LuPdBi is fully gapped with a possibly unconventional pairing character. The co-existence of superconductivity and the transport signature of topological surface states in the same bulk alloy suggests that LuPdBi represents a very promising candidate as a topological superconductor.

SUBMITTER: Xu G 

PROVIDER: S-EPMC4104393 | biostudies-literature | 2014 Jul

REPOSITORIES: biostudies-literature

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Weak antilocalization effect and noncentrosymmetric superconductivity in a topologically nontrivial semimetal LuPdBi.

Xu Guizhou G   Wang Wenhong W   Zhang Xiaoming X   Du Yin Y   Liu Enke E   Wang Shouguo S   Wu Guangheng G   Liu Zhongyuan Z   Zhang Xi Xiang XX  

Scientific reports 20140721


A large number of half-Heusler compounds have been recently proposed as three-dimensional (3D) topological insulators (TIs) with tunable physical properties. However, no transport measurements associated with the topological surface states have been observed in these half-Heusler candidates due to the dominating contribution from bulk electrical conductance. Here we show that, by reducing the mobility of bulk carriers, a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hallmar  ...[more]

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