Ontology highlight
ABSTRACT:
SUBMITTER: Zhang K
PROVIDER: S-EPMC4159626 | biostudies-literature | 2014 Sep
REPOSITORIES: biostudies-literature
Zhang Kexiong K Liang Hongwei H Liu Yang Y Shen Rensheng R Guo Wenping W Wang Dongsheng D Xia Xiaochuan X Tao Pengcheng P Yang Chao C Luo Yingmin Y Du Guotong G
Scientific reports 20140910
Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm(2) at the ...[more]