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Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.


ABSTRACT: A novel device structure is developed, which uses easy-to-grow nano scaffold films to localize oxygen vacancies at vertical heterointerfaces. The strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high-concentration oxygen vacancy. Non-linear electroresistance at room temperature is demonstrated using these nano scaffold devices. The resistance variations exceed two orders of magnitude with very high uniformity and tunability.

SUBMITTER: Lee S 

PROVIDER: S-EPMC4225682 | biostudies-literature | 2014 Sep

REPOSITORIES: biostudies-literature

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Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.

Lee Shinbuhm S   Sangle Abhijeet A   Lu Ping P   Chen Aiping A   Zhang Wenrui W   Lee Jae Sung JS   Wang Haiyan H   Jia Quanxi Q   MacManus-Driscoll Judith L JL  

Advanced materials (Deerfield Beach, Fla.) 20140728 36


A novel device structure is developed, which uses easy-to-grow nano scaffold films to localize oxygen vacancies at vertical heterointerfaces. The strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high-concentration oxygen vacancy. Non-linear electroresistance at room temperature is demonstrated using these nano scaffold devices. The resistance variations exceed two orders of magnitude with very high uniformity and tunability. ...[more]

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