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Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO.

ABSTRACT: Exciton dissociation at the zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 10¹⁹ cm^-3 to 10¹⁷ cm^-3, is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced light-induced de-trapping of electrons from the surface of the nitrogen-doped ZnO. The ability to improve the surface properties of ZnO by introducing a simple nitrogen dopant has general applicability.

SUBMITTER: Musselman KP

PROVIDER: S-EPMC4228972 | biostudies-literature | 2014 Jun

REPOSITORIES: biostudies-literature

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Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO.

Musselman Kevin P KP Albert-Seifried Sebastian S Hoye Robert L Z RL Sadhanala Aditya A Muñoz-Rojas David D MacManus-Driscoll Judith L JL Friend Richard H RH

Advanced functional materials 20140307 23

Exciton dissociation at the zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 1019 cm-3 to 1017 cm-3, is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced light-induced de-trapping of electr ...[more]

PMID: 25520604

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