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Neuromorphic crossbar circuit with nanoscale filamentary-switching binary memristors for speech recognition.


ABSTRACT: In this paper, a neuromorphic crossbar circuit with binary memristors is proposed for speech recognition. The binary memristors which are based on filamentary-switching mechanism can be found more popularly and are easy to be fabricated than analog memristors that are rare in materials and need a more complicated fabrication process. Thus, we develop a neuromorphic crossbar circuit using filamentary-switching binary memristors not using interface-switching analog memristors. The proposed binary memristor crossbar can recognize five vowels with 4-bit 64 input channels. The proposed crossbar is tested by 2,500 speech samples and verified to be able to recognize 89.2% of the tested samples. From the statistical simulation, the recognition rate of the binary memristor crossbar is estimated to be degraded very little from 89.2% to 80%, though the percentage variation in memristance is increased very much from 0% to 15%. In contrast, the analog memristor crossbar loses its recognition rate significantly from 96% to 9% for the same percentage variation in memristance.

SUBMITTER: Truong SN 

PROVIDER: S-EPMC4256962 | biostudies-literature | 2014

REPOSITORIES: biostudies-literature

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Neuromorphic crossbar circuit with nanoscale filamentary-switching binary memristors for speech recognition.

Truong Son Ngoc SN   Ham Seok-Jin SJ   Min Kyeong-Sik KS  

Nanoscale research letters 20141123 1


In this paper, a neuromorphic crossbar circuit with binary memristors is proposed for speech recognition. The binary memristors which are based on filamentary-switching mechanism can be found more popularly and are easy to be fabricated than analog memristors that are rare in materials and need a more complicated fabrication process. Thus, we develop a neuromorphic crossbar circuit using filamentary-switching binary memristors not using interface-switching analog memristors. The proposed binary  ...[more]

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