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Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance.


ABSTRACT: An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an I ON/I OFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

SUBMITTER: Zhang D 

PROVIDER: S-EPMC4266530 | biostudies-literature | 2014

REPOSITORIES: biostudies-literature

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Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance.

Zhang Dalin D   Cheng Gong G   Wang Jianquan J   Zhang Chunqian C   Liu Zhi Z   Zuo Yuhua Y   Zheng Jun J   Xue Chunlai C   Li Chuanbo C   Cheng Buwen B   Wang Qiming Q  

Nanoscale research letters 20141209 1


An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irra  ...[more]

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