Dataset Information

Nondestructive tribochemistry-assisted nanofabrication on GaAs surface.

ABSTRACT: A tribochemistry-assisted method has been developed for nondestructive surface nanofabrication on GaAs. Without any applied electric field and post etching, hollow nanostructures can be directly fabricated on GaAs surfaces by sliding a SiO2 microsphere under an ultralow contact pressure in humid air. TEM observation on the cross-section of the fabricated area shows that there is no appreciable plastic deformation under a 4 nm groove, confirming that GaAs can be removed without destruction. Further analysis suggests that the fabrication relies on the tribochemistry with the participation of vapor in humid air. It is proposed that the formation and breakage of GaAs-O-Si bonding bridges are responsible for the removal of GaAs material during the sliding process. As a nondestructive and conductivity-independent method, it will open up new opportunities to fabricate defect-free and well-ordered nucleation positions for quantum dots on GaAs surfaces.

SUBMITTER: Song C

PROVIDER: S-EPMC4356979 | biostudies-literature | 2015 Mar

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

Nondestructive tribochemistry-assisted nanofabrication on GaAs surface.

Song Chenfei C Li Xiaoying X Dong Hanshan H Yu Bingjun B Wang Zhiming Z Qian Linmao L

Scientific reports 20150312

A tribochemistry-assisted method has been developed for nondestructive surface nanofabrication on GaAs. Without any applied electric field and post etching, hollow nanostructures can be directly fabricated on GaAs surfaces by sliding a SiO2 microsphere under an ultralow contact pressure in humid air. TEM observation on the cross-section of the fabricated area shows that there is no appreciable plastic deformation under a 4 nm groove, confirming that GaAs can be removed without destruction. Furth ...[more]

PMID: 25761910

Similar Datasets

Project description:Two-dimensional (2D) topological insulators have fascinating physical properties which are promising for applications within spintronics. In order to realize spintronic devices working at room temperature, materials with a large nontrivial gap are needed. Bismuthene, a 2D layer of Bi atoms in a honeycomb structure, has recently attracted strong attention because of its record-large nontrivial gap, which is due to the strong spin-orbit coupling of Bi and the unusually strong interaction of the Bi atoms with the surface atoms of the substrate underneath. It would be a significant step forward to be able to form 2D materials with properties such as bismuthene on semiconductors such as GaAs, which has a band gap size relevant for electronics and a direct band gap for optical applications. Here, we present the successful formation of a 2D Bi honeycomb structure on GaAs, which fulfills these conditions. Bi atoms have been incorporated into a clean GaAs(111) surface, with As termination, based on Bi deposition under optimized growth conditions. Low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/S) demonstrates a well-ordered large-scale honeycomb structure, consisting of Bi atoms in a √3 × √3 30° reconstruction on GaAs(111). X-ray photoelectron spectroscopy shows that the Bi atoms of the honeycomb structure only bond to the underlying As atoms. This is supported by calculations based on density functional theory that confirm the honeycomb structure with a large Bi-As binding energy and predict Bi-induced electronic bands within the GaAs band gap that open up a gap of nontrivial topological nature. STS results support the existence of Bi-induced states within the GaAs band gap. The GaAs:Bi honeycomb layer found here has a similar structure as previously published bismuthene on SiC or on Ag, though with a significantly larger lattice constant and only weak Bi-Bi bonding. It can therefore be considered as an extreme case of bismuthene, which is fundamentally interesting. Furthermore, it has the same exciting electronic properties, opening a large nontrivial gap, which is the requirement for room-temperature spintronic applications, and it is directly integrated in GaAs, a direct band gap semiconductor with a large range of (opto)electronic devices.

Dataset Information

Nondestructive tribochemistry-assisted nanofabrication on GaAs surface.

Publications

Nondestructive tribochemistry-assisted nanofabrication on GaAs surface.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets