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Mechanism of the defect formation in supported graphene by energetic heavy ion irradiation: the substrate effect.

ABSTRACT: Although ion beam technology has frequently been used for introducing defects in graphene, the associated key mechanism of the defect formation under ion irradiation is still largely unclear. We report a systematic study of the ion irradiation experiments on SiO2-supported graphene, and quantitatively compare the experimental results with molecular dynamic simulations. We find that the substrate is, in fact, of great importance in the defect formation process, as the defects in graphene are mostly generated through an indirect process by the sputtered atoms from the substrate.

SUBMITTER: Li W

PROVIDER: S-EPMC4415598 | biostudies-literature | 2015 Apr

REPOSITORIES: biostudies-literature

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Mechanism of the defect formation in supported graphene by energetic heavy ion irradiation: the substrate effect.

Li Weisen W Wang Xinwei X Zhang Xitong X Zhao Shijun S Duan Huiling H Xue Jianming J

Scientific reports 20150430

Although ion beam technology has frequently been used for introducing defects in graphene, the associated key mechanism of the defect formation under ion irradiation is still largely unclear. We report a systematic study of the ion irradiation experiments on SiO2-supported graphene, and quantitatively compare the experimental results with molecular dynamic simulations. We find that the substrate is, in fact, of great importance in the defect formation process, as the defects in graphene are most ...[more]

PMID: 25927476

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