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Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures.

ABSTRACT: In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor-liquid-solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I-V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm(2). Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ?111? oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device.

SUBMITTER: Kral S

PROVIDER: S-EPMC4498448 | biostudies-literature | 2015 Jul

REPOSITORIES: biostudies-literature

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Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures.

Kral S S Zeiner C C Stöger-Pollach M M Bertagnolli E E den Hertog M I MI Lopez-Haro M M Robin E E El Hajraoui K K Lugstein A A

Nano letters 20150612 7

In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor-liquid-solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I-V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying ca ...[more]

PMID: 26052733

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