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Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers.

ABSTRACT: This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10(-15) cm(2) s(-1), 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value.

SUBMITTER: Guan B

PROVIDER: S-EPMC4521158 | biostudies-literature | 2015 Jul

REPOSITORIES: biostudies-literature

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Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers.

Guan Bin B Siampour Hamidreza H Fan Zhao Z Wang Shun S Kong Xiang Yang XY Mesli Abdelmadjid A Zhang Jian J Dan Yaping Y

Scientific reports 20150731

This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10(-15) cm(2) s(-1), 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electr ...[more]

PMID: 26227342

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