Unknown

Dataset Information

0

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics.


ABSTRACT: Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes.

SUBMITTER: Bae YC 

PROVIDER: S-EPMC4542327 | biostudies-literature | 2015 Aug

REPOSITORIES: biostudies-literature

altmetric image

Publications

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics.

Bae Yoon Cheol YC   Lee Ah Rahm AR   Baek Gwang Ho GH   Chung Je Bock JB   Kim Tae Yoon TY   Park Jea Gun JG   Hong Jin Pyo JP  

Scientific reports 20150820


Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxid  ...[more]

Similar Datasets

| S-EPMC7490352 | biostudies-literature
| S-EPMC10796274 | biostudies-literature
| S-EPMC2735726 | biostudies-literature
| S-EPMC6677552 | biostudies-literature
| S-EPMC5974700 | biostudies-literature
| S-EPMC3936214 | biostudies-other
| S-EPMC6045668 | biostudies-literature
| S-EPMC5884772 | biostudies-literature
| S-EPMC4550907 | biostudies-literature
| S-EPMC6062319 | biostudies-literature