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Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong.

ABSTRACT: The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850?nm this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8??m(-2), which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.

SUBMITTER: Quan Jiang A

PROVIDER: S-EPMC4594126 | biostudies-literature | 2015

REPOSITORIES: biostudies-literature

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Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong.

Quan Jiang An A Jian Meng Xiang X Wei Zhang David D Hyuk Park Min M Yoo Sijung S Jin Kim Yu Y Scott James F JF Seong Hwang Cheol C

Scientific reports 20151006

The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850 nm this produces a dielectric constant of 8200 with the max ...[more]

PMID: 26440528

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