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Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric.

ABSTRACT: Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer.

SUBMITTER: Ki Min B

PROVIDER: S-EPMC4632157 | biostudies-literature | 2015 Nov

REPOSITORIES: biostudies-literature

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Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric.

Ki Min Bok B Kim Seong K SK Jun Kim Seong S Ho Kim Sung S Kang Min-A MA Park Chong-Yun CY Song Wooseok W Myung Sung S Lim Jongsun J An Ki-Seok KS

Scientific reports 20151104

Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space ...[more]

PMID: 26530817

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