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Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces.

ABSTRACT: The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.

SUBMITTER: Drost R

PROVIDER: S-EPMC4653630 | biostudies-literature | 2015 Nov

REPOSITORIES: biostudies-literature

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Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces.

Drost Robert R Kezilebieke Shawulienu S M Ervasti Mikko M Hämäläinen Sampsa K SK Schulz Fabian F Harju Ari A Liljeroth Peter P

Scientific reports 20151120

The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN ...[more]

PMID: 26584674

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