Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics.

ABSTRACT: The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal-insulator transitions. Metal-insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controlled metal-insulator transitions have been challenging because of the limited number of electrons accumulated by gate dielectrics, or possible electrochemical reaction in ionic liquid gate. Here we achieve a positive-bias gate-controlled metal-insulator transition near the transition temperature. A significant number of electrons were accumulated via a high-permittivity TiO2 gate dielectric with subnan

SUBMITTER: Yajima T 

PROVIDER: S-EPMC4682056 | biostudies-literature | 2015 Dec

REPOSITORIES: biostudies-literature