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Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration.


ABSTRACT: The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3-dimensional films, and high current can degrade device lifetime and lead to breakdown problems. Here, we report on the electrical and thermal characteristics of poly-Si NWs, which can also be used to control electrical and physical breakdown under high current density. This work reports a controllable catastrophic change of poly-Si NWs by thermally-assisted electromigration and underlying mechanisms. It also reports the direct and real time observation of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron microscopy.

SUBMITTER: Park JY 

PROVIDER: S-EPMC4726027 | biostudies-literature | 2016 Jan

REPOSITORIES: biostudies-literature

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Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration.

Park Jun-Young JY   Moon Dong-Il DI   Seol Myeong-Lok ML   Jeon Chang-Hoon CH   Jeon Gwang-Jae GJ   Han Jin-Woo JW   Kim Choong-Ki CK   Park Sang-Jae SJ   Lee Hee Chul HC   Choi Yang-Kyu YK  

Scientific reports 20160119


The importance of poly-crystalline silicon (poly-Si) in semiconductor manufacturing is rapidly increasing due to its highly controllable conductivity and excellent, uniform deposition quality. With the continuing miniaturization of electronic components, low dimensional structures such as 1-dimensional nanowires (NWs) have attracted a great deal of attention. But such components have a much higher current density than 2- or 3-dimensional films, and high current can degrade device lifetime and le  ...[more]

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