Trilayer Tunnel Selectors for Memristor Memory Cells.
Ontology highlight
ABSTRACT:
SUBMITTER: Choi BJ
PROVIDER: S-EPMC4737268 | biostudies-literature | 2016 Jan
REPOSITORIES: biostudies-literature
Publications
Trilayer Tunnel Selectors for Memristor Memory Cells.
Choi Byung Joon BJ Zhang Jiaming J Norris Kate K Gibson Gary G Kim Kyung Min KM Jackson Warren W Zhang Min-Xian Max MX Li Zhiyong Z Yang J Joshua JJ Williams R Stanley RS
Advanced materials (Deerfield Beach, Fla.) 20151119 2
An integrated memory cell with a mem-ristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x /Ta2 O5 /TaN1+x crested barrier selector yields a large nonlinearity (>10(4) ), high endurance (>10(8) ), low variability, and low temperature dependence. ...[more]
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