Ontology highlight
ABSTRACT:
SUBMITTER: Chen YT
PROVIDER: S-EPMC4753442 | biostudies-literature | 2016 Feb
REPOSITORIES: biostudies-literature
Scientific reports 20160215
Direct measurements of carrier diffusion in GaN nanorods with a designed InGaN/GaN layer-in-a-wire structure by scanning near-field optical microscopy (SNOM) were performed at liquid-helium temperatures of 10 K. Without an applied voltage, intrinsic diffusion lengths of photo-excited carriers were measured as the diameters of the nanorods differ from 50 to 800 nm. The critical diameter of nanorods for carrier diffusion is concluded as 170 nm with a statistical approach. Photoluminescence spectra ...[more]