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Robust ultrasensitive tunneling-FET biosensor for point-of-care diagnostics.

ABSTRACT: For point-of-care (POC) applications, robust, ultrasensitive, small, rapid, low-power, and low-cost sensors are highly desirable. Here, we present a novel biosensor based on a complementary metal oxide semiconductor (CMOS)-compatible silicon nanowire tunneling field-effect transistor (SiNW-TFET). They were fabricated "top-down" with a low-cost anisotropic self-stop etching technique. Notably, the SiNW-TFET device provided strong anti-interference capacity by applying the inherent ambipolarity via both pH and CYFRA21-1 sensing. This offered a more robust and portable general protocol. The specific label-free detection of CYFRA21-1 down to 0.5?fgml(-1) or ~12.5?aM was achieved using a highly responsive SiNW-TFET device with a minimum sub-threshold slope (SS) of 37?mVdec(-1). Furthermore, real-time measurements highlighted the ability to use clinically relevant samples such as serum. The developed high performance diagnostic system is expected to provide a generic platform for numerous POC applications.

SUBMITTER: Gao A

PROVIDER: S-EPMC4773835 | biostudies-literature | 2016 Mar

REPOSITORIES: biostudies-literature

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Robust ultrasensitive tunneling-FET biosensor for point-of-care diagnostics.

Gao Anran A Lu Na N Wang Yuelin Y Li Tie T

Scientific reports 20160302

For point-of-care (POC) applications, robust, ultrasensitive, small, rapid, low-power, and low-cost sensors are highly desirable. Here, we present a novel biosensor based on a complementary metal oxide semiconductor (CMOS)-compatible silicon nanowire tunneling field-effect transistor (SiNW-TFET). They were fabricated "top-down" with a low-cost anisotropic self-stop etching technique. Notably, the SiNW-TFET device provided strong anti-interference capacity by applying the inherent ambipolarity vi ...[more]

PMID: 26932158

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