Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor.

ABSTRACT: Arsenene, as a member of the Group V elemental two-dimensional materials appears on the horizon, has shown great prospects. However, its indirect bandgap limits the applications in optoelectronics. In this theoretical work, we reported that partial oxidation can tune the indirect bandgap of arsenene into the direct one. Attributed to the enthalpy decreasing linear to the oxygen ratio, partial oxidized arsenene can be controllably produced by the progressive oxidation under low temperature. Importantly, by increasing the oxygen content from 1O/18As to 18O/18As, the oxidation can narrow the direct bandgap of oxidized arsenene from 1.29 to 0.02?eV. The bandgap of partial oxidized arsenene is proportional to the oxygen content. Consequently, the partial oxidized arsenene with tunable direct bandgap has great potentials in the high efficient infra light emitter and photo-voltaic devices.

SUBMITTER: Wang YJ

PROVIDER: S-EPMC4845026 | biostudies-literature | 2016 Apr

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor.

Wang Yu-Jiao YJ Zhou Kai-Ge KG Yu Geliang G Zhong Xing X Zhang Hao-Li HL

Scientific reports 20160426

Arsenene, as a member of the Group V elemental two-dimensional materials appears on the horizon, has shown great prospects. However, its indirect bandgap limits the applications in optoelectronics. In this theoretical work, we reported that partial oxidation can tune the indirect bandgap of arsenene into the direct one. Attributed to the enthalpy decreasing linear to the oxygen ratio, partial oxidized arsenene can be controllably produced by the progressive oxidation under low temperature. Impor ...[more]

PMID: 27114052

Similar Datasets

Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor.

Project description:Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here, we present a combined theoretical and experimental study of ambipolar hydrodynamic transport in bilayer graphene demonstrating that the conductivity is given by the sum of two Drude-like terms that describe relative motion between electrons and holes, and the collective motion of the electron-hole plasma. As predicted, the measured conductivity of gapless, charge-neutral bilayer graphene is sample- and temperature-independent over a wide range. Away from neutrality, the electron-hole conductivity collapses to a single curve, and a set of just four fitting parameters provides quantitative agreement between theory and experiment at all densities, temperatures, and gaps measured. This work validates recent theories for dissipation-enabled hydrodynamic conductivity and creates a link between semiconductor physics and the emerging field of viscous electronics.

| S-EPMC9012458 | biostudies-literature

Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor.

Project description:Understanding the remarkable excitonic effects and controlling the exciton binding energies in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in future photonic and optoelectronic devices. Here, we demonstrate large excitonic effects and gate-tunable exciton binding energies in single-layer rhenium diselenide (ReSe2) on a back-gated graphene device. We used scanning tunneling spectroscopy and differential reflectance spectroscopy to measure the quasiparticle electronic and optical bandgap of single-layer ReSe2, respectively, yielding a large exciton binding energy of 520 meV. Further, we achieved continuous tuning of the electronic bandgap and exciton binding energy of monolayer ReSe2 by hundreds of milli-electron volts through electrostatic gating, attributed to tunable Coulomb interactions arising from the gate-controlled free carriers in graphene. Our findings open a new avenue for controlling the bandgap renormalization and exciton binding energies in 2D semiconductors for a wide range of technological applications.

| S-EPMC6641939 | biostudies-literature

Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene.

Project description:Two-dimensional (2-D) materials such as MoS2 and phosphorene provide an ideal platform to realize extremely thin body metal-oxide-semiconductor field effect transistors (MOSFETs) which is highly immune to short channel effects in the ultra-scaled regime. Even with the excellent electrostatic integrity inherent in 2-D system, however, 2-D materials suffer from the lack of efficient doping method which is crucial in MOSFETs technology. Recently, an unusual phase transition from semiconductor to metal driven by the thickness modulation has been predicted in mono-elemental 2-D material arsenene. Utilizing this extraordinary property, we propose doping-free arsenene heterostructure MOSFETs based on the lateral multilayer (metallic source)/monolayer (semiconducting channel)/multilayer (metallic drain) arsenene heterostructure. Metallic multilayer arsenene in the source and drain can serve as electrodes without doping. We investigate the potential performance of arsenene heterostructure MOSFETs through atomistic simulations using density functional theory and nonequilibrium Green's function. The intrinsic upper limit of the on-state current in arsenene heterostructure MOSFETs is estimated by studying the effect of layer number in the source and drain. We comprehensively analyze the competitiveness of arsenene heterostructure MOSFETs through benchmarking with monolayer arsenene homostructure MOSFETs equipped with the highly degenerate doped source and drain, suggesting superior performance of heterostructure MOSFETs over homostructure MOSFETs.

| S-EPMC6408428 | biostudies-literature

Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors.

Project description:Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we demonstrate that an atomically thin two-dimensional semiconductor has a bandgap with strong dependence on dielectric environments. Specifically, monolayer MoS2 bandgap is shown to change from 2.8?eV to 1.9?eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed.

| S-EPMC4932597 | biostudies-literature

Simulation Evidence of Hexagonal-to-Tetragonal ZnSe Structure Transition: A Monolayer Material with a Wide-Range Tunable Direct Bandgap.

Project description:2D material with tunable direct bandgap in the intermediate region (i.e., ≈2-3 eV) is key to the achievement of high efficiency in visible-light optical devices. Herein, a simulation evidence of structure transition of monolayer ZnSe from the experimental pseudohexagonal structure to the tetragonal structure (t-ZnSe) under lateral pressure is shown, suggesting a possible fabrication route to achieve the t-ZnSe monolayer. The as-produced t-ZnSe monolayer exhibits highly tunable bandgap under the biaxial strains, allowing strain engineering of t-ZnSe's bandgap over a wide range of 2-3 eV. Importantly, even under the biaxial strain up to 7%, the t-ZnSe monolayer still keeps its direct-gap property in the desirable range of 2.40-3.17 eV (corresponding to wavelength of green light to ultraviolet). The wide-range tunability of direct bandgap appears to be a unique property of the t-ZnSe monolayer, suggesting its potential application as a light-emitting 2D material in red-green-blue light emission diodes or as complementary light-absorption material in the blue-yellow region for multijunction solar cells. The straddling of the band edge of the t-ZnSe monolayer over the redox potential of water splitting reaction also points to its plausible application for visible-light-driven water splitting.

| S-EPMC5061093 | biostudies-literature

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

Project description:Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

| S-EPMC5515976 | biostudies-literature

Tunable Hypersonic Bandgap Formation in Anisotropic Crystals of Dumbbell Nanoparticles.

Project description:Phononic materials exhibit mechanical properties that alter the propagation of acoustic waves and are widely useful for metamaterials. To fabricate acoustic materials with phononic bandgaps, colloidal nanoparticles and their assemblies allow access to various crystallinities in the submicrometer scale. We fabricated anisotropic crystals with dumbbell-shaped nanoparticles via field-directed self-assembly. Brillouin light spectroscopy detected the formation of direction-dependent hypersonic phononic bandgaps that scale with the lattice parameters. In addition, the local resonances of the constituent nanoparticles enable metamaterial behavior by opening hybridization gaps in disordered structures. Unexpectedly, this bandgap frequency is robust to changes in the dumbbell aspect ratio. Overall, this study provides a structure-property relationship for designing anisotropic phononic materials with targeted phononic bandgaps.

| S-EPMC10569095 | biostudies-literature

Wide bandgap semiconductor nanomembranes as a long-term biointerface for flexible, implanted neuromodulator.

Project description:Electrical neuron stimulation holds promise for treating chronic neurological disorders, including spinal cord injury, epilepsy, and Parkinson's disease. The implementation of ultrathin, flexible electrodes that can offer noninvasive attachment to soft neural tissues is a breakthrough for timely, continuous, programable, and spatial stimulations. With strict flexibility requirements in neural implanted stimulations, the use of conventional thick and bulky packages is no longer applicable, posing major technical issues such as short device lifetime and long-term stability. We introduce herein a concept of long-lived flexible neural electrodes using silicon carbide (SiC) nanomembranes as a faradic interface and thermal oxide thin films as an electrical barrier layer. The SiC nanomembranes were developed using a chemical vapor deposition (CVD) process at the wafer level, and thermal oxide was grown using a high-quality wet oxidation technique. The proposed material developments are highly scalable and compatible with MEMS technologies, facilitating the mass production of long-lived implanted bioelectrodes. Our experimental results showed excellent stability of the SiC/silicon dioxide (SiO2) bioelectronic system that can potentially last for several decades with well-maintained electronic properties in biofluid environments. We demonstrated the capability of the proposed material system for peripheral nerve stimulation in an animal model, showing muscle contraction responses comparable to those of a standard non-implanted nerve stimulation device. The design concept, scalable fabrication approach, and multimodal functionalities of SiC/SiO2 flexible electronics offer an exciting possibility for fundamental neuroscience studies, as well as for neural stimulation-based therapies.

| S-EPMC9388084 | biostudies-literature

3D auxetic single material periodic structure with ultra-wide tunable bandgap.

Project description:The design and the combination of innovative metamaterials are attracting increasing interest in the scientific community because of their unique properties that go beyond the ones of natural materials. In particular, auxetic materials and phononic crystals are widely studied for their negative Poisson's ratio and their bandgap opening properties, respectively. In this work, auxeticity and phononic crystals bandgap properties are properly combined to obtain a single phase periodic structure with a tridimensional wide tunable bandgap. When an external tensile load is applied to the structure, the auxetic unit cells change their configurations by exploiting the negative Poisson's ratio and this results in the tuning, either hardening or softening, of the frequencies of the modes limiting the 3D bandgap. Moreover, the expansion of the unit cell in all the directions, due to the auxeticity property, guarantees a fully 3D bandgap tunability of the proposed structure. Numerical simulations and analytical models are proposed to prove the claimed properties. The first experimental evidence of the tunability of a wide 3D bandgap is then shown thanks to the fabrication of a prototype by means of additive manufacturing.

| S-EPMC5797155 | biostudies-literature

Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap.

Project description:Two-dimensional (2D) semiconductors with desirable bandgaps and high carrier mobility have great potential in electronic and optoelectronic applications. In this work, we proposed α-TeB and β-TeB monolayers using density functional theory (DFT) combined with the particle swarm-intelligent global structure search method. The high dynamical and thermal stabilities of two TeB structures indicate high feasibility for experimental synthesis. The electronic structure calculations show that the two structures are indirect bandgap semiconductors with bandgaps of 2.3 and 2.1 eV, respectively. The hole mobility of the β-TeB sheet is up to 6.90 × 102 cm2 V-1 s-1. By reconstructing the two structures, we identified two new horizontal and lateral heterostructures, and the lateral heterostructure presents a direct band gap, indicating more probable applications could be further explored for TeB sheets.

| S-EPMC8588529 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data