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Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses.


ABSTRACT: The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350?nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions.

SUBMITTER: Fukuda K 

PROVIDER: S-EPMC4899690 | biostudies-literature | 2016 Jun

REPOSITORIES: biostudies-literature

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Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses.

Fukuda Kenjiro K   Sekine Tomohito T   Shiwaku Rei R   Morimoto Takuya T   Kumaki Daisuke D   Tokito Shizuo S  

Scientific reports 20160609


The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm ha  ...[more]

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