Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Graphene and water-based elastomers thin-film composites by dip-moulding.

ABSTRACT: Thin-film elastomers (elastic polymers) have a number of technologically significant applications ranging from sportswear to medical devices. In this work, we demonstrate that graphene can be used to reinforce 20 micron thin elastomer films, resulting in over 50% increase in elastic modulus at a very low loading of 0.1 wt%, while also increasing the elongation to failure. This loading is below the percolation threshold for electrical conductivity. We demonstrate composites with both graphene oxide and reduced graphene oxide, the reduction being undertaken in-situ or ex-situ using a biocompatible reducing agent in ascorbic acid. The ultrathin films were cast by dip moulding. The transparency of the elastomer films allows us to use optical microscopy image and confirm the uniform distribution as well as the conformation of the graphene flakes within the composite.

SUBMITTER: Iliut M

PROVIDER: S-EPMC4913555 | biostudies-literature | 2016 Sep

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Graphene and water-based elastomers thin-film composites by dip-moulding.

Iliut Maria M Silva Claudio C Herrick Scott S McGlothlin Mark M Vijayaraghavan Aravind A

Carbon 20160901

Thin-film elastomers (elastic polymers) have a number of technologically significant applications ranging from sportswear to medical devices. In this work, we demonstrate that graphene can be used to reinforce 20 micron thin elastomer films, resulting in over 50% increase in elastic modulus at a very low loading of 0.1 wt%, while also increasing the elongation to failure. This loading is below the percolation threshold for electrical conductivity. We demonstrate composites with both graphene oxi ...[more]

PMID: 27594706

Similar Datasets

Shape-Memory Composites Based on Ionic Elastomers.

Project description:Shape-memory polymers tend to present rigid behavior at ambient temperature, being unable to deform in this state. To obtain soft shape-memory elastomers, composites based on a commercial rubber crosslinked by both ionic and covalent bonds were developed, as these materials do not lose their elastomeric behavior below their transition (or activation) temperature (using ionic transition for such a purpose). The introduction of fillers, such as carbon black and multiwalled carbon nanotubes (MWCNTs), was studied and compared with the unfilled matrix. By adding contents above 10 phr of MWCNT, shape-memory properties were enhanced by 10%, achieving fixing and recovery ratios above 90% and a faster response. Moreover, by adding these fillers, the conductivity of the materials increased from ~10-11 to ~10-4 S·cm-1, allowing the possibility to activate the shape-memory effect with an electric current, based on the heating of the material by the Joule effect, achieving a fast and clean stimulus requiring only a current source of 50 V.

| S-EPMC8953204 | biostudies-literature

Efficient Multi-Material Structured Thin Film Transfer to Elastomers for Stretchable Electronic Devices.

Project description:Stretchable electronic devices must conform to curved surfaces and display highly reproducible and predictable performance over a range of mechanical deformations. Mechanical resilience in stretchable devices arises from the inherent robustness and stretchability of each component, as well as from good adhesive contact between functional and structural components. In this work, we combine bench-top thin film structuring with solvent assisted lift-off transfer to produce flexible and stretchable multi-material thin film devices. Patterned wrinkled thin films made of gold (Au), silicon dioxide (SiO2), or indium tin oxide (ITO) were produced through thermal shrinking of pre-stressed polystyrene (PS) substrates. The wrinkled films were then transferred from the PS to poly(dimethylsiloxane) (PDMS) substrates through covalent bonding and solvent-assisted dissolution of the PS. Using this approach, different materials and hybrid structures could be lifted off simultaneously from the PS, simplifying the fabrication of multi-material stretchable thin film devices. As proof-of-concept, we used this structuring and transfer method to fabricate flexible and stretchable thin film heaters. Their characterization at a variety of applied voltages and under cyclic tensile strain showed highly reproducible heating performance. We anticipate this fabrication method can aid in the development of flexible and stretchable electronic devices.

| S-EPMC8879079 | biostudies-literature

Alcohol Recognition by Flexible, Transparent and Highly Sensitive Graphene-Based Thin-Film Sensors.

Project description:Chemical sensors detect a variety of chemicals across numerous fields, such as automobile, aerospace, safety, indoor air quality, environmental control, food, industrial production and medicine. We successfully assemble an alcohol-sensing device comprising a thin-film sensor made of graphene nanosheets (GNs) and bacterial cellulose nanofibers (BCNs). We show that the GN/BCN sensor has a high selectivity to ethanol by distinguishing liquid-phase or vapor-phase ethanol (C2H6O) from water (H2O) intelligently with accurate transformation into electrical signals in devices. The BCN component of the film amplifies the ethanol sensitivity of the film, whereby the GN/BCN sensor has 12400% sensitivity for vapor-phase ethanol compared to the pure GN sensor, which has only 21% sensitivity. Finally, GN/BCN sensors demonstrate fast response/recovery times and a wide range of alcohol detection (10-100%). The superior sensing ability of GN/BCN compared to GNs alone is due to the improved wettability of BCNs and the ionization of liquids. We prove a facile, green, low-cost route for the assembly of ethanol-sensing devices with potential for vast application.

| S-EPMC5489480 | biostudies-literature

Straining graphene using thin film shrinkage methods.

Project description:Theoretical works suggest the possibility and usefulness of strain engineering of graphene by predicting remarkable properties, such as Dirac cone merging, bandgap opening and pseudo magnetic field generation. However, most of these predictions have not yet been confirmed because it is experimentally difficult to control the magnitude and type (e.g., uniaxial, biaxial, and so forth) of strain in graphene devices. Here we report two novel methods to apply strain without bending the substrate. We employ thin films of evaporated metal and organic insulator deposited on graphene, which shrink after electron beam irradiation or heat application. These methods make it possible to apply both biaxial strain and in-plane isotropic compressive strain in a well-controlled manner. Raman spectroscopy measurements show a clear splitting of the degenerate states of the G-band in the case of biaxial strain, and G-band blue shift without splitting in the case of in-plane isotropic compressive strain. In the case of biaxial strain application, we find out the ratio of the strain component perpendicular to the stretching direction is at least three times larger than what was previously observed, indicating that shrinkage of the metal or organic insulator deposited on graphene induces both tensile and compressive strain in this atomically thin material. Our studies present for the first time a viable way to apply strain to graphene without the need to bend the substrate.

| S-EPMC3962252 | biostudies-other

Poly(3-hexylthiophene)-Based Organic Thin-Film Transistors with Virgin Graphene Oxide as an Interfacial Layer.

Project description:We fabricated and characterized poly(3-hexylthiophene-2, 5-diyl) (P3HT)-based Organic thin-film transistors (OTFTs) containing an interfacial layer made from virgin Graphene Oxide (GO). Previously chemically modified GO and reduced GO (RGO) were used to modify OTFT interfaces. However, to our knowledge, there are no published reports where virgin GO was employed for this purpose. For the sake of comparison, OTFTs without modification were also manufactured. The structure of the devices was based on the Bottom Gate Bottom Contact (BGBC) OTFT. We show that the presence of the GO monolayer on the surface of the OTFT's SiO2 dielectric and Au electrode surface noticeably improves their performance. Namely, the drain current and the field-effect mobility of OTFTs are considerably increased by modifying the interfaces with the virgin GO deposition. It is suggested that the observed enhancement is connected to a decrease in the contact resistance of GO-covered Au electrodes and the particular structure of the P3HT layer on the dielectric surface. Namely, we found a specific morphology of the organic semiconductor P3HT layer, where larger interconnecting polymer grains are formed on the surface of the GO-modified SiO2. It is proposed that this specific morphology is formed due to the increased mobility of the P3HT segments near the solid boundary, which was confirmed via Differential Scanning Calorimetry measurements.

| S-EPMC9736656 | biostudies-literature

Sputtered thin film deposited laser induced graphene based novel micro-supercapacitor device for energy storage application.

Project description:Pioneering flexible micro-supercapacitors, designed for exceptional energy and power density, transcend conventional storage limitations. Interdigitated electrodes (IDEs) based on laser-induced graphene (LIG), augmented with metal-oxide modifiers, harness synergies with layered graphene to achieve superior capacitance. This study presents a novel one-step process for sputtered plasma deposition of HfO2, resulting in enhanced supercapacitance performance. Introducing LIG-HfO2 micro-supercapacitor (MSC) devices with varied oxygen flow rates further boosts supercapacitance performance by introducing oxygen functional groups. FESEM investigations demonstrate uniform coating of HfO2 on LIG fibers through sputtering. Specific capacitance measurements reveal 6.4 mF/cm2 at 5 mV/s and 4.5 mF/cm2 at a current density of 0.04 mA/cm2. The LIG-HfO2 devices exhibit outstanding supercapacitor performance, boasting at least a fourfold increase over pristine LIG. Moreover, stability testing indicates a high retention rate of 97% over 5000 cycles, ensuring practical real-time applications.

| S-EPMC11251010 | biostudies-literature

Reduced Graphene Oxide Thin Film on Conductive Substrates by Bipolar Electrochemistry.

Project description:Recent years have shown an increased interest in developing manufacturing processes for graphene and its derivatives that consider the environmental impact and large scale cost-effectiveness. However, today's most commonly used synthesis routes still suffer from their excessive use of harsh chemicals and/or the complexity and financial cost of the process. Furthermore, the subsequent transfer of the material onto a substrate makes the overall process even more intricate and time-consuming. Here we describe a single-step, single-cell preparation procedure of metal-supported reduced graphene oxide (rGO) using the principle of bipolar electrochemistry of graphite in deionized water. Under the effect of an electric field between two stainless steel feeder electrodes, grapheme layers at the anodic pole of the wireless graphite were oxidized into colloidal dispersion of GO, which migrated electrophoretically towards the anodic side of the cell, and deposited in the form of rGO (d(002) = 0.395 nm) by van der Waals forces. For substrates chemically more susceptible to the high anodic voltage, we show that the electrochemical setup can be adapted by placing the latter between the wireless graphite and the stainless steel feeder anode. This method is straightforward, inexpensive, environmentally-friendly, and could be easily scaled up for high yield and large area production of rGO thin films.

| S-EPMC4756714 | biostudies-literature

Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors.

Project description:We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (~6 nm) In-Pr-O thin films with near-atomic smoothness (~0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-art electrical performance with mobility of 17.03 ± 1.19 cm2/Vs and on/off current ratio of ~106 based on Si/SiO2 substrate. This achievement is due to the low electronegativity and standard electrode potential of Pr, the high bond strength of Pr-O, same bixbyite structure of Pr2O3 and In2O3, and In-Pr-O channel's nanometer-thin and ultrasmooth nature. Therefore, the designed In-Pr-O channel holds great promise for next-generation transistors.

| S-EPMC9415306 | biostudies-literature

Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.

Project description:We demonstrate direct production of graphene on SiO2 by CVD growth of graphene at the interface between a Ni film and the SiO2 substrate, followed by dry mechanical delamination of the Ni using adhesive tape. This result is enabled by understanding of the competition between stress evolution and microstructure development upon annealing of the Ni prior to the graphene growth step. When the Ni film remains adherent after graphene growth, the balance between residual stress and adhesion governs the ability to mechanically remove the Ni after the CVD process. In this study the graphene on SiO2 comprises micron-scale domains, ranging from monolayer to multilayer. The graphene has >90% coverage across centimeter-scale dimensions, limited by the size of our CVD chamber. Further engineering of the Ni film microstructure and stress state could enable manufacturing of highly uniform interfacial graphene followed by clean mechanical delamination over practically indefinite dimensions. Moreover, our findings suggest that preferential adhesion can enable production of 2-D materials directly on application-relevant substrates. This is attractive compared to transfer methods, which can cause mechanical damage and leave residues behind.

| S-EPMC4031480 | biostudies-literature

High-mobility ambipolar ZnO-graphene hybrid thin film transistors.

Project description:In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

| S-EPMC3920279 | biostudies-other

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data