Dataset Information

Low-Temperature Synthesis of Bismuth Chalcohalides: Candidate Photovoltaic Materials with Easily, Continuously Controllable Band gap.

ABSTRACT: Although bismuth chalcohalides, such as BiSI and BiSeI, have been recently attracting considerable attention as photovoltaic materials, the methods available to synthesize them are quite limited thus far. In this study, a novel, facile method to synthesize these chalcohalides, including BiSBr1-xIx solid solutions, at low temperatures was developed via the substitution of anions from O(2-) to S(2-) (or Se(2-)) using bismuth oxyhalide precursors. Complete phase transition was readily observed upon treatment of BiOI particles with H2S or H2Se at surprisingly low temperatures of less than 150?°C and short reaction times of less than 1?h, producing BiSI and BiSeI particles, respectively. This method was also applied for synthesizing BiSBr1-xIx, where continuous changes in their band gaps were observed depending on the ratio between iodine and bromine. The composition of all elements (except oxygen) in the chalcohalides thus produced was almost identical to that of the oxyhalide precursors, attributed to the suppressed volatilization of halogens at such low temperatures. All chalcohalides loaded on FTO clearly exhibited an anodic photocurrent in an acetonitrile solution containing I(-), attributed to their n-type nature, e.g., the BiSI electrode exhibited high IPCE (64% at 700?nm, +0.2?V vs. Ag/AgCl).

SUBMITTER: Kunioku H

PROVIDER: S-EPMC5013401 | biostudies-literature | 2016 Sep

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

Low-Temperature Synthesis of Bismuth Chalcohalides: Candidate Photovoltaic Materials with Easily, Continuously Controllable Band gap.

Kunioku Hironobu H Higashi Masanobu M Abe Ryu R

Scientific reports 20160907

Although bismuth chalcohalides, such as BiSI and BiSeI, have been recently attracting considerable attention as photovoltaic materials, the methods available to synthesize them are quite limited thus far. In this study, a novel, facile method to synthesize these chalcohalides, including BiSBr1-xIx solid solutions, at low temperatures was developed via the substitution of anions from O(2-) to S(2-) (or Se(2-)) using bismuth oxyhalide precursors. Complete phase transition was readily observed upon ...[more]

PMID: 27600662

Similar Datasets

Project description:The goal of this study is to determine how bulk vibrational properties and interfacial structure affect thermal transport at interfaces in wide band gap semiconductor systems. Time-domain thermoreflectance measurements of thermal conductance G are reported for interfaces between nitride metals and group IV (diamond, SiC, Si, and Ge) and group III-V (AlN, GaN, and cubic BN) materials. Group IV and group III-V semiconductors have systematic differences in vibrational properties. Similarly, HfN and TiN are also vibrationally distinct from each other. Therefore, comparing G of interfaces formed from these materials provides a systematic test of how vibrational similarity between two materials affects interfacial transport. For HfN interfaces, we observe conductances between 140 and 300 MW m-2 K-1, whereas conductances between 200 and 800 MW m-2 K-1 are observed for TiN interfaces. TiN forms exceptionally conductive interfaces with GaN, AlN, and diamond, that is, G > 400 MW m-2 K-1. Surprisingly, interfaces formed between vibrationally similar and dissimilar materials are similarly conductive. Thus, vibrational similarity between two materials is not a necessary requirement for high G. Instead, the time-domain thermoreflectance experiment (TDTR) data, an analysis of bulk vibrational properties, and transmission electron microscopy (TEM) suggest that G depends on two other material properties, namely, the bulk phonon properties of the vibrationally softer of the two materials and the interfacial structure. To determine how G depends on interfacial structure, TDTR and TEM measurements were conducted on a series of TiN/AlN samples prepared in different ways. Interfacial disorder at a TiN/AlN interface adds a thermal resistance equivalent to ∼1 nm of amorphous material. Our findings improve fundamental understanding of what material properties are most important for thermally conductive interfaces. They also provide benchmarks for the thermal conductance of interfaces with wide band gap semiconductors.

Dataset Information

Low-Temperature Synthesis of Bismuth Chalcohalides: Candidate Photovoltaic Materials with Easily, Continuously Controllable Band gap.

Publications

Low-Temperature Synthesis of Bismuth Chalcohalides: Candidate Photovoltaic Materials with Easily, Continuously Controllable Band gap.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets