Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of μm-thick a-Si:H Films.

ABSTRACT: Being a low-cost, mass-production-compatible route to attain crystalline silicon, post-deposition crystallization of amorphous silicon has received intensive research interest. Here we report a low-temperature (300 °C), rapid (crystallization rate of ~17 nm/min) means of a-Si:H crystallization based on high-density hydrogen plasma. A model integrating the three processes of hydrogen insertion, etching, and diffusion, which jointly determined the hydrogenation depth of the excess hydrogen into the treated micrometer thick a-Si:H, is proposed to elucidate the hydrogenation depth evolution and the crystallization mechanism. The effective temperature deduced from the hydrogen diffusion coefficient is far beyond the substrate temperature of 300 °C, which implies additional driving forces for cr

SUBMITTER: Zhou HP 

PROVIDER: S-EPMC5013535 | biostudies-literature | 2016 Sep

REPOSITORIES: biostudies-literature