High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices.

ABSTRACT: High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In₂O₃, Ga₂O_3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180-200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25-45 cm² V^-1 s^-1) than single

SUBMITTER: Lin YH 

PROVIDER: S-EPMC5016782 | biostudies-literature | 2015 Jul

REPOSITORIES: biostudies-literature